| 1. | Standard guide for measuring characteristics of sapphire substrates
蓝宝石衬底的特征测量标准指南 |
| 2. | ( 2 ) with the aid of in situ monitoring tool , we have investigated the effects of substrate nitridation
( 2 )以在位监测为辅助工具，研究了蓝宝石衬底氮化的影响。 |
| 3. | What ' s more , we have studied t he properties of the films . the work is base for sio2 used as anti - reflective and protective coatings on sapphire dome
本文主要开展了蓝宝石衬底上氧化硅增透保护膜系的设计与制备工艺和性能研究，为将氧化硅用作蓝宝石头罩的增透保护涂层奠定了基础。 |
| 4. | At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ) , molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生长技术一般采用有机金属化学气相外延法( mocvd ) ，在蓝宝石衬底的( 0001 )面上外延生长gan材料，另外还有分子束外延技术( mbe )及卤化物汽相外延技术( hvpe )等。 |
| 5. | The results of design explain that if sio2 films deposited on the surfaces of sapphire the average transmittance in 3 ~ 5 m waveband can exceed 97 % , which can meet the requirements of missile dome in infrared application
设计结果表明，蓝宝石衬底双面镀sio _ 2 、 sio _ 2 / si等膜系，在3 5 m波段的平均透过率大于97 ，可满足导弹头罩设计和使用的要求。 |
| 6. | The average transmittance at a wavelength of 3 ~ 5 m of sapphire coated with one layer of sio2 antireflective films on two sides can reach 96 . 43 % . so as to the transmittance of coated sapphire can satisfy the demand of window and dome applications
蓝宝石衬底双面镀sio _ 2膜，在3 5 m波段范围内，平均透过率达到96 . 43 ，满足了导弹头罩的设计使用要求。 |
| 7. | The main contents and results are listed as follows : with the help of opfcad software , anti - reflective and protective films of sio2 and sio2 / si are designed on the sapphire substrate and analysis of structure sensitive factor and variation are done
主要研究成果如下：利用opfcad软件在蓝宝石衬底上设计了sio _ 2 、 sio _ 2 si等增透保护膜系，并对所设计的膜系进行了结构敏感因子( n ， d )及结构偏差分析。 |
| 8. | The effect of deposited condition , include substrate temperatures , different substrates and annealing on the structural properties of zno films has been studied in considerable detail . it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c , the substrate of sapphire . the sample on this condition is 0 . 3491
通过分析衬底温度、不同衬底和退火对样品结构的影响，得到了样品的最佳制备条件：衬底温度450 、蓝宝石衬底，此条件下制备的样品具有高度( 002 )取向性， ( 002 )衍射峰半高宽仅仅0 . 3491 ，原子力显微镜( afm )分析表明zno薄膜具有密集堆积的均匀柱状晶粒。 |
| 9. | These devices include light - emitting diode , laser diode , uv - detector , mesfet , hemt , modfet etc . since 1990 ' s , on the basis of advanced techniques of materials preparation , gan - based leds and lds were achieved successfully , and leds on sapphire substrates have already been commercialized
九十年代以来，在先进制备技术的基础上， gan基leds和lds分别研制成功，其中蓝宝石衬底上的leds已经进入了商品化。 gan基微电子器件也得到了广泛的关注，取得了一定的研究进展。 |
| 10. | The morphologies of one - dimensional gan nano structures were affected greatly by substrates . we can get different one - dimensional gan nano structures by choosing different substrates . among the products , smooth and straight gan nanowires on quartz substrates , long and transparent gan nanobelts on sapphire substrates , short gan nanorods on si substrates and gan nanopoles on gaas substrates were found , respectively
我们可以通过选择不同的衬底来分别合成形态不同的一维gan纳米结构，其中在石英衬底上合成的是平直的gan纳米线，在蓝宝石衬底上合成的是细长透明的gan纳米带，在gaas衬底上合成的是柱状的一维gan纳米结构，而在以衬底上合成的是粗短的gan纳米棒。 |
