| 1. | The effects of impact angle , particle velocity , erodent size and impact time were demonstrated
研究了冲蚀角度、冲击速度、磨粒尺寸、冲蚀时间等影响因素对材料的冲蚀率的影响。 |
| 2. | Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium - dioxid coating ; optical method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第2部 |
| 3. | Testing of materials for semiconductor technology - determination of etch rates of etching mixtures - part 3 : aluminium , gravimetric method
半导体技术试验.蚀刻混合剂浸蚀率测定.第3部分:铝.测 |
| 4. | Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium monocrystals ; gravimetric method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第1部 |
| 5. | The curve of h1was descending , and the others soils were ascending during prophase of rainfall , descending after 10min
从溅蚀率历时过程看， h1溅蚀率呈下降趋势，其余土样的溅蚀率在降雨初先升高， 10min后下降。 |
| 6. | The results showed that , the amounts of t2 and t3 were highest , and the rates of soil splash erosion were lower during the rainfall of 20min
20min的溅蚀实验表明， t2 、 t3土壤溅蚀量较高， h3 、 t1土壤溅蚀率较低。 |
| 7. | Ferrous sulphate treatment improves the erosion rate of the alubrass . the corrosion rates observed are however higher than that obtained with mexel 432
硫酸亚铁处理改善铝黄铜的浸蚀率，然而其腐蚀率仍高于m . 432处理。 |
| 8. | According to aggregates of different particle sizes , the splash erosion rate of 0 . 5 ~ lmm aggregates was highest , and 2 ~ 3mm was lowest
在不同粒径的团聚体溅蚀率中， 0 . 5 1mm的溅蚀率最大，溅蚀率最低的为2 3mm粒径的团聚体。 |
| 9. | The stability of aggregates of t3 , t2 was very low and multilevel pore was few , so soil splash erosion and sediment was very high . 5
T3 、 t2团聚体发育差，缺乏多级孔隙，形成的高径流量和溅蚀率使t2 、 t3的产沙率在相对大的数值范围内变动。 |
| 10. | The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
结果表明非晶碳膜对于氧离子体具有高的抗刻蚀性，其刻蚀率不仅与刻蚀的过程参量有关，而且决定于膜的沉积条件。 |
