| 1. | Electronic structure and magnetic properties of ce1 - xyxfe2 compounds
势垒层表面态及其他局域态性质研究 |
| 2. | Pinning theory of fermi energy and surface state measurement of znsno3 gas sensitive material
3气敏材料表面态测定 |
| 3. | Preparation and study of the surface states on nano particle photocatalyst films
纳米薄膜光催化剂的制备与表面态研究 |
| 4. | The model of the photoluminescence of the nanocrystalline silicon can explain the result
纳米硅的表面态发光模型能较好地解释实验结果。 |
| 5. | Under pulse condition , charging and discharging of surface states between gate and drain induce gan hemt current collapse
脉冲条件下, ganhemt电流崩塌效应主要由栅漏之间表面态充放电引起。 |
| 6. | Furthermore , we also demonstrate theoretically and experimentally that the surface state in photonic crystals exists indeed
本论文还对光子晶体表面态进行了理论计算和实验验证，证明了表面态的存在。 |
| 7. | The nanometer effect of the pores , which increased surface area and caused the failure of conglomeration of dbo - ppv polymer , can lead to the 90nm blue shift of the pl peaks of dbo - ppv
这一结果确认了多孔硅的跃迁过程主要是由量子限制效应决定，复合过程受表面态影响。 |
| 8. | The theory simulation result , formulation calculation result and experiment data are well corresponded each other . in addition , we calculated the surface energy of al and cu at different temperatures
但在基本带隙中，仍有表面态存在，再构不能完全赶走带隙中的表面态 |
| 9. | The bulk electronic properties of gaas have been described both by the second - neighbour tight - binding formalism for ( 112 ) , ( 113 ) ( 114 ) surface and nearest neighbour tight - binding sp3s * for ( 2 5 11 ) surface
再构后，不考虑表面原子的驰豫变化， gaas ( 2511 )表面表面态的变化主要表现在o . gev ~ 1 . oev的一些表面态完全消失。 |
| 10. | A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built , using steady - state continuity equations and including the effect of surface states
通过求解一维电流连续性方程和传输方程,同时考虑表面态陷阱的作用,建立了gan基msm结构紫外探测器在稳态光照下i - v关系的解析模型。 |
