| 1. | It is found that the interface diffusions are dominant under the influence of high intensity of pulsati
在高密度电脉冲作用下，表面扩散起主导作用。 |
| 2. | Fire hazard testing - part 9 - 2 : surface spread of flame ; summary and relevance of test methods
火灾试验.第9 - 2部分:火焰表面扩散.试验方法的概要及其相关方面 |
| 3. | They spread locally over the epithelial surfaces , but there no invasion of underlying tissues or spread to distant sites
它们在皮肤表面扩散但不会往下面组织侵袭也不会扩散到很远的部位。 |
| 4. | The process by which the surface carbon concentration of a ferrous alloy is increased by diffusion from the surrounding environment
从周围环境中向铁基合金表面扩散碳，从而使其表面碳浓度提高的工艺过程。 |
| 5. | These explosions instantly converted matter to energy and would spread across a planet ' s surface , vaporizing everything in their path
这些爆炸持续的把物质转化为能量，因而将会在星球的表面扩散开来，并蒸发掉前进路线上的一切阻碍。 |
| 6. | Bubble enlargement during ascent is caused by a continuous diffusion of dissolved carbon dioxide through the bubble ' s gas / liquid interface
在气泡上升的过程中，溶解的二氧化碳会不断自气泡表面扩散到气泡里头去，因此气泡会不断变大。 |
| 7. | On the basis of analysing the mechanism of improvement of the adsorption mass transfer by ultrasound field , a batch model cosindering pore difusion and surface diffusion , and a fixed - bed homogeneous model of mass transfer is developed .
论文在分析超声场强化固-液吸附传质的机理上，提出了考虑孔内扩散与表面扩散的静态传质模型以及考虑轴向扩散的均相动态传质模型。 |
| 8. | The mechanism of hydrothermal process has also been studied . under the hydrothermal conditions , a small quantity of cu2 + in solutions were carried to the copper lattice due to the diffusion and convection , then the cu2 + move to the positions of lattice defect . the crystallization reaction happened and copper powders got a good crystallinity and an excellent antioxidation
在稳定的水热条件下,由于扩散、对流或强迫流动引起少部分溶解在溶液中的铜离子向铜晶体表面附近的区域输运,在晶面某一位置上被吸附,并通过表面扩散,顺着台阶运动到扭折位置,发生结晶反应。 |
| 9. | Two sources of si were identified . one was from the sif62 - ions , which were formed by a reaction between the treatment solution and quartz substrate . the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
薄膜中的si元素来源于二部分，其中一部分来源于反应液与石英玻璃基片反应所生成的[ sif _ 6 ] ~ ( 2 - )离子，另一部分则来自于薄膜在高温热处理( 700或高于700 )过程中从石英玻璃表面扩散到薄膜中的si元素。 |
| 10. | And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics . a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature . and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data
本文以苯为溶剂溶液降温法培养出了60mm 40mm 3mm大尺寸hhm单晶；另外探讨了hhm在四氯化碳溶液中的生长行为，溶液降温法培养出了20mm 20mm 1mm的较大尺寸单晶，并用动态循环体视显微镜观察法测定了其在不同的过饱和下主要显露晶面的法向生长速率，在较大过饱和度范围内考察了其bcf表面扩散螺位错生长机制。 |
