| 1. | The study of high - frequency power transformer
高频功率变压器研究 |
| 2. | Rules for capacitors ; part 10 : rules for high frequency power capacitors
电容器规范.第10部分:高频功率电容器规范 |
| 3. | Semiconductor discrete devices . detail specification for type 3da89 high - frequency power transistor
半导体分立器件. 3da89型高频功率晶体管详细规范 |
| 4. | Semiconductor discrete device . detail specification for type 3da150 high frequency and power transistor
半导体分立器件. 3da150型高频功率晶体管详细规范 |
| 5. | This thesis pays more attention to the drive circuit of high frequency power mosfet , power regulation circuit and frequency - tracing circuit
本文主要研究高频功率mosfet的驱动电路、频率跟踪电路以及功率调节电路。 |
| 6. | This thesis pays more attention to the hf mosfet drive circuit and characteristics of balancing parallel mosfets " currents in dynamic mode
本文主要研究高频功率mosfet的驱动电路和在动态开关模式下的并联均流特性。 |
| 7. | Firstly , the driving characteristics of high frequency power mosfet and parameter computation of drive circuit are introduced briefly . then the useful and reliable drive circuit is designed
首先简要介绍了高频功率mosfet的驱动特点以及驱动电路参数的计算，然后根据实际情况选择并设计了实用可靠的驱动电路。 |
| 8. | As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier , valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually
随着新一代半导体高频功率放大管的一些突破性变革和多种技术的推陈出新，电真空管功率放大器正在被全固态高频线性功率放大器逐步取代。 |
| 9. | With the development of electronic technology in the field of high - frequency and high - power , power mosfet is gradually enhancing its important status in semiconductor apparatus and is being widely applied in power converters as switch . with the increasing of the operating frequency ( > 200khz ) , the energy loss caused by parasitic capacitance will affect the efficiency of power transforming in converters . especially in the applications of high frequency power supply using mosfet as main devices ( the unit of frequency is mhz ) , the energy loss caused by the switch process will badly affect its efficiency
随着电力电子技术进一步向高频的大功率用电领域发展，功率mosfet在各种电力半导体器件中的重要地位日益显著，使用功率mosfet作为开关器件的功率转换电路也日益增多，但随着器件开关频率的提高(大于200khz ) ，由器件极间电容引起的能量损耗将会影响到功率转换电路的能量传输效率，特别是在以mosfet作为开关器件的高频感应加热电源中(工作频率可达兆赫) ， mosfet在开关过程中的能量损耗严重影响到电源的效率，因此如何减小开关器件的损耗提高高频功率转换线路的效率成为电力电子技术领域的重要研究课题之一。 |
| 10. | High frequency switching technique is becoming more popular in the power electronics area , the high frequency power transistors are applied in the buck - boost type chopper system . the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ) , some new kinds of power swithing devices , are deeply studied
高频开关技术是当今电力电子技术发展的方向，本文研究的buck - boost斩波系统中采用了高频功率器件，所以本文对新型开关器件? ?功率mos场效应管[ mosfet ]和绝缘门极晶体管[ igbt ]的特性进行了初步研究。 |
