| 1. | these most frequently used are the angstrom unit(a.u. or =cm)and the millimicron(mμ=cm).
通常是以埃（AU或cm）和毫微米（mcm）为单位。 |
| 2. | This effect is particularly important for leds since the emitted spectral width is several hundred angstroms .
这种效应对于发光二极管来说是特别重要的，因为发光二极管所发射的光谱带宽可达几百埃。 |
| 3. | Does you like me , and the angstrom squeeze in the more second alias ofah than
你喜欢我埃塞阿比亚的别名吗？ |
| 4. | Angstrom sciences , inc
三海光电技术有限公司 |
| 5. | At this rate , we will soon be measuring components in angstroms
按照这种发展速度，我们很快就要用埃（ angstrom ）作为单位来度量组件的尺寸了。 |
| 6. | It is part of the success of the theory that the same value ? approximately one angstrom per second per second ? works for all these diverse appearances
同一个数值（大约每秒每秒一埃）能够适用于那麽多不同的情况，也算是这个理论的成功之处。 |
| 7. | Structurally , biomaterials are typically composite materials , being intimately associated with organic mac - romolecules , and are often hierarchically organized on a scale from angstroms to millimeters
通常这些材料在温和的自然环境下，通过特别设计的有机大分子调控材料的晶化过程形成的。 |
| 8. | In the experimental studies on the behaviors of helium in aluminum , ion implantation technique was adopted to introduce helium with different energies , doses and distributions into some specimen of monocrystal , polycrystal , and preferred orientation as to the structure of aluminum . the energies varied in the range of 50ev to 4 . 87mev . the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20 . 7 microns
在金属铝中氦行为的实验研究中，首先用离子注入技术在单晶、多晶以及择优取向的铝样品中引入不同能量、剂量和浓度分布的he原子，能量范围从50ev 4 . 87mev ， trim模拟的he浓度峰值的深度范围为16 ( |
| 9. | Ii ) energies of the sputtered atoms vary mainly from several to several teens ev , with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally , and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions , but the angular distributions are not influenced by the incident energy very greatly
Ii )溅射原子的能量一般集中在几个到十几个电子伏特的范围内，在高能量区域也有所分布，但数量很少;溅射原子的出射位置就在离子入射位置的附近(埃数量级) ;溅射原子的角度在垂直方向和斜射方向都有所分布，但以垂直出射为主;溅射原子的能量、角度分布受到了入射离子能量、角度的影响，但入射离子能量对溅射原子的出射角影响不大。 |
