| 1. | the bandgap of the double heterostructure was only 0. 86μm, yet up to 1ma of photo-current was detected.
双异质结的带隙仅为086m，迄今探测到的光电达1mA。 |
| 2. | The advantage of electro-absorption as a detector is that it is not necessary to fabricate a localized region of different bandgap .
利用电吸收制作探测器的优点在于不必制备出有不同带隙的局部区域。 |
| 3. | A new photonic bandgap cover has been designed
设计了一种新型的光子晶体覆层。 |
| 4. | Analysis of photonic bandgap microstrip structure using fdtd method
方法分析光子带隙微带结构 |
| 5. | Another good review article on the wide bandgap nitrides
另一篇不错的宽能隙氮化物系列的论文。 |
| 6. | The bandgap properties of one dimension heterostructure photonic crystal
异质结构光子晶体的能带特性研究 |
| 7. | A pmc structure with a complete photonic bandgap has been designed
设计出了具有完全光子禁带的pmc结构。 |
| 8. | Microstrip electromagnetic bandgap structure with the multiple band gaps
具有多频带特性的微带电磁带隙结构 |
| 9. | Silicon bandgap temperature sensor
硅带温度传感器 |
| 10. | Wide bandgap semiconductor
宽禁带半导体 |
