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Home > english-chinese > "cmos集成电路" in Chinese

Chinese translation for "cmos集成电路"

cmos integrated circuit

Related Translations:
cmos:  互补金属氧化物半导体存储器互补金属氧化物半导体工艺互补式金属-氧化层-半导体互补型金属氧化半导体逻辑相补型金属酸化物半导体帧校准器中的设置不一致
cmos power:  互补金属氧化半导体电力
cmos circuits:  互补金属氧化半导体电路
cmos inverter:  cmos倒相器
cmos process:  cmos工艺
cmos structure:  互补金氧半导体结构
cmos converters:  互补金属氧化半导体倒换器
bipolar cmos:  双极型互补金属氧化物半导体, 双极型cmos
cmos chip:  cmos芯片
dynamic cmos:  动态互补金氧半导体
Example Sentences:
1.The use of edgeless nmos transistors in place of 2 - edgeless transistors eliminates the excessive radiation - induced edge leakage in many cmos parts after irradiation
为了测试最新设计的1万门cmos门阵列的抗辐射水平,本文设计了一个cmos集成电路测试样片。
2.Designs of redundant , radiation hardening and anti - lock of cmos integrate circuit were developed as the reliability steps of the on - board embedded computer system
提出了利用一定冗余备份的容错设计技术、计算机抗辐加固技术和cmos集成电路抗闩锁技术等提高星载嵌入式计算机系统可靠性的措施。
3.Mems optical switch for optical communication is fabrication by silicon surface micromachining technology . surface micromachining technique , based on the standard cmos processes , in the other hand , offers greater flexibility for realizing free - space optical systems on a single chip
Mems光开关是采用表面微细机械加工技术制作而成,硅表面微机械加工技术是以cmos集成电路工艺为基础的,它可以灵活地把光开关集成在一块硅片上。
4.The implementation of in - chip clock generator is often based on modern cmos ic process technology which is usually adopted by very large scale digital system . while designing a deep sub - micrometer cmos circuit , delay , power consumption and die size are of the main factors that must be considered
使用现代深亚微米cmos集成电路工艺制造的内部时钟发生器要综合考虑延时、功耗、面积等各种重要因素,而且经常要针对soc系统的需求设计特殊的电路结构。
5.In fault location area , a novel algorithm for fault location using iddq and iddt is designed in this paper . this algorithm is realized by combination of iddq and iddt based on wavelet transform . after classification of the potential faults by pattern recognition , the actual faults can be accurately located effectively
在故障定位算法方面:本文设计了一种基于电流信息的电路故障定位算法,该算法将静态电流诊断方法与基于小波分析的动态电流诊断方法相结合,并通过模式识别进行决策,可以实现cmos集成电路多故障的准确定位。
6.Automatic water - measuring meter is the combinative production of traditional method and present cmos integration circuit technology . it consists of water - level sensor and mainframe circuit . on the basis of analyzing its application , this paper gives the design of mainframe circuit , including time circuit , time - sequence circuit , input - interface circuit , switch circuit and power circuit
本文在分析cmos集成电路应用的基础上,给出了自动量水仪表主机电路的设计,包括定时电路、时序电路、输入接口电路、开关电路和电源电路的设计;其次,对水位传感器进行了研究,分析了水位传感器的工作原理、测量使用条件、动态特性、静态特性以及水位传感器的率定、标定方法。
7.Since the early 1990s , when the electronics industry came to the stage of digital technology , china has broken through in high - end series personal computers and servers , large - scale parallel computer systems , chinese electronic publishing systems , large - scale spc exchanges for central offices , mobile communications systems , sdh wdm fiber communications systems , thin route satellite communications systems , new generation digital video terminals , manufacturing technology for 0 . 8 - 0 . 35 m cmos integrated circuit chips , etc
到90年代进入数字技术阶段,高档系列微机和服务器产品、大规模并行计算机系统、中文电子出版系统、大型局用数字程控交换机、移动通信系统、 sdh波分复用光纤通信系统、稀路由卫星通信系统、新一代数字视频终端、 08 ? 035微米cmos集成电路芯片制造技术等,都有突破性进展。
8.Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ) . in this paper , some means to harden the devices against these phenomena are used . guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup
在本文设计中,采用双环保护结构,大大的降低了cmos集成电路对单粒子闩锁效应的敏感性;对nmos管采用环型栅结构代替传统的双边器件结构,消除了辐射感生边缘寄生晶体管漏电效应;采用附加晶体管的冗余锁存结构,减轻了单粒子翻转效应的影响。
Similar Words:
"cmosic cmos" Chinese translation, "cmos充不上电或电压不足" Chinese translation, "cmos倒相器" Chinese translation, "cmos电池电量低" Chinese translation, "cmos工艺" Chinese translation, "cmos技术" Chinese translation, "cmos没电了" Chinese translation, "cmos系统未设置" Chinese translation, "cmos芯片" Chinese translation, "cmos芯片中参数中有误" Chinese translation