| 1. | The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics 利用m - lec法可以消除单晶中的位错,降低缺陷密度,降低单晶中的杂质含量,并能使杂质在晶体中的分布均匀,得到晶体均匀性、纯净度都高的gaas单晶。 |