| 1. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible .
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
| 2. | Metal organic molecular beam epitaxial growth system
有机金属分子束磊晶生长系统 |
| 3. | Liquid goldbright gold liquid phase epitaxial growth system
液相磊晶生长系统 |
| 4. | Luminescent properties of c implanted epitaxial silicon
外延硅的光致发光特性 |
| 5. | Gas source molecular beam epitaxial growth system
瓦斯源分子束磊晶生长系统 |
| 6. | Dislocation reduction in gan on sapphire by epitaxial lateral overgrowth
中的位错降低 |
| 7. | Photo assisted vapor phase epitaxial growth system
光辅助汽相磊晶生长系统 |
| 8. | Reduced pressure vapor phase epitaxial growth system
减压汽相磊晶生长系统 |
| 9. | N - channel silicon planar epitaxial jfet
通道硅平面型外延接面型场效晶体管 |
| 10. | Reduced presure vapor phase epitaxial growth system
减压汽相磊晶生长系统 |
