| 1. | The higher value is comparable to those obtained in cvd epitaxy .
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。 |
| 2. | The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using .
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。 |
| 3. | Single layer growth of strained epitaxy at low temperature
低温下应变外延层的单层生长 |
| 4. | Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生长 |
| 5. | Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生长的跨导为186 |
| 6. | Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半导体外延层晶格失配度的计算 |
| 7. | Electric parameter test of semiconductor epitaxy slice based on hall effect
基于霍尔效应的半导体外延片电参数测试 |
| 8. | Reciprocal space maps of hgcdte cdznte heterostructures grown by liquid phase epitaxy
液相外延材料的倒易空间图研究 |
| 9. | Molecular beam epitaxy , mbe
分子束磊晶 |
| 10. | Vapor growth epitaxy
汽相外延生长 |
