| 1. | To minimize channeling effects, the gaas target should be misaligned from the axis of the beam .
为了使沟道效应最小，GaAs靶应稍偏离离子束的轴向。 |
| 2. | The improvement in the basic gaas laser performance, however, could not be brought about by an evolutionary development process .
但是GaAs激光器基本性能的改进不能依靠这种渐进的发展过程。 |
| 3. | Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible .
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。 |
| 4. | A novel multi - octave gaas monolithic 5 - bit digital phase shifter
单片五位数字移相器 |
| 5. | Protection of gaas fea module from surge voltage
砷化镓场效应放大模块的浪涌电压防护 |
| 6. | Gaas solution for cable tv network upgrade
为电缆电视网络系统改造提供的砷化镓方案二 |
| 7. | Guidelines for gaas mmic and fet life testing
Gaas mmic和fet寿命试验的指南 |
| 8. | Research on thermal cleaning technique for gaas photocathode
Gaas光电阴极热清洗工艺研究 |
| 9. | Investigation of gaas wafer surface blistering by hydrogen implantation
晶片表面剥离机理 |
| 10. | Studies of tb adsorption on gaas and its interface formation
表面的吸附及其界面形成的研究 |
