| 1. | Conclusion the regular follow - up must be conducted after first operation of gct
组织学检查27例复发后仍呈良性， 3例恶变。 |
| 2. | Objective to summarize the features and treatment of recurrent giant cell tumor ( gct ) of limbs
目的总结肢体骨巨细胞瘤复发特征及治疗措施。 |
| 3. | Objective to summarize the features and treatment of recurrent giant cell tumor ( gct ) of limbs
摘要目的总结肢体骨巨细胞瘤复发特征及治疗措施。 |
| 4. | The first part of this paper introduced gct company , which established two years ago in the form of case
本文第一部分以案例的形式介绍了一个刚刚成立两年的it企业- - - gct公司。 |
| 5. | Semiconductor discrete device . detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes
半导体分立器件gp gt和gct级3cg110型pnp硅小功率晶体管.详细规范 |
| 6. | Semiconductor discrete device . detail specification for semiconductor opto - couplers for type gh21 , gh22 and gh23 of gp , gt and gct classes
半导体分立器件. gp gt和gct级gh21 gh22和gh23型半导体光耦合器详细规范 |
| 7. | Semiconductor discrete device . detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes
半导体分立器件gp gt和gct级3dg130型npn硅高频小功率晶体管.详细规范 |
| 8. | Methods clinical , radiological , pathological data and treatment of 30 cases of recurrent gct of limb were analyzed
方法随访复发性肢体骨巨细胞瘤30例，对其临床表现、影像学特征、病理及治疗方法进行回顾性分析。 |
| 9. | Semiconductor discrete device . detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes
半导体分立器件gp gt和gct级3dg182型npn硅小功率高反压晶体管.详细规范 |
