| 1. | In this thesis , the gesi hbt ' s reliability is investigated
本文对gesihbt的可靠性问题进行研究。 |
| 2. | Hetero - junction bipolar transistor hbt
异质接面双载子晶体管 |
| 3. | Heterojunction bipolar transistor , hbt
异质接面双载子晶体管 |
| 4. | Hbt lock on a heap or b - tree index
Hbt =堆或b树索引的锁。 |
| 5. | Hydraulic system of concrete pump hbt
40混凝土泵液压系统 |
| 6. | Orientation effects on ingap gaas hbt
性能的影响 |
| 7. | In the process of the circuit design , sige hbt and mos devices must be arranged properly in order to realize advantage complementarity
在具体电路设计过程中,根据sigehbt和mos器件的特点,合理使用两种器件以实现优势互补。 |
| 8. | A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt
室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压 |
| 9. | First of all , a new gesi hbt process flow was designed . with this technology flow , the stability , reliability and the performance of gesi hbts were improved significantly
首先本论文提出了一种新型的gesihbt工艺流程，采用这种流程极大地改善了器件稳定性、可靠性及其性能。 |
| 10. | In this dissertation , sige hbt device and sige bicmos high speed operational amplifier ( op ) are designed successfully by studying sige hbt theory and sige bicmos circuit characteristics
论文通过对sigehbt原理和sigebicmos电路特点的研究,设计出sigehbt器件和sigebicmos高速运算放大器。 |
