| 1. | The progress and preparation of binary compound high - k dielectric
材料研究进展及制备 |
| 2. | Research progress in electrical properties of high - k hfo2 gate dielectric films
2栅介质材料电学特性的研究进展 |
| 3. | Trace elements and isotopic geochemistry of the high - k calcalkaline granites in north margin of eastern part of west kunlun
西昆仑东段北缘花岗岩微量元素及同位素地球化学 |
| 4. | The volcanic rocks evolved from low - k to high - k in composition with time and migrated spatially from north to south
在时间上火山岩成份有从低钾向高钾演化的总趋势，在空间上火山活动有由北向南迁移的趋势。 |
| 5. | The thermal stability of high - k thin film deposited on si substrate has been studied using x - ray photoelectron spectroscopy ( xps )
通过x射线光电子能谱对沉积在si基底上的high - k薄膜的热稳定性进行了研究。 |
| 6. | These high - k materials degraded to silicide island at temperatures of higher than 950 . these results are consistent with rta samples
在950加热后， high - k物质将热降解为hfsi 。各样品在加热过程中的变化与其在rta处理后的结果是一致的。 |
| 7. | In order to investigate the interfacial reaction of high - k thin film on si substrate , the high - k samples were studied by xps as a function of annealing temperature
为了考察high - k物质与si基底的界面反应，以温度为函数，对样品进行xps光电子谱线测定。 |
| 8. | This work is based on the preparation , characterization , and processing of high - k materials ba0 . 8sro0 . 2tio3 thin film capacitor was deposited using mod technique with highly controlled precursor solution
采用封闭式回流系统和廉价的ba和sr的醋酸盐为前躯物成功制备了不同厚度的bst薄膜，观察了薄膜厚度对其电学性能的影响。 |
| 9. | Compared to other commonly referenced high - k materials , hfo2 is known for its stability on silicon and process compatibility . the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied . with the study on hfo2 . we can receive a few significative conclusion : 1
结果表明，与传统的hf清洗的si表面相比， nh _ 4f清洗的si表面与hfo _ 2具有更好的热力学稳定性，因而可获得更低的eot和栅泄漏电流密度； 3 )研究了溅射气氛和退火工艺对hfo _ 2栅介质薄膜性质的影响。 |
| 10. | These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics . among all high - k gate dielectric materials , hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si , biggish constant and reasonable band alignment . our researches focus on hfo2 dielectrics
高k栅介质材料已经被广泛地研究来替代sio _ 2 ，以降低栅泄漏电流和改善可靠性，其中， hfo _ 2由于其较大的介电常数、较大的禁带宽度、与si的导带和价带较大的偏置、以及与si的高的热力学稳定性等特征，被认为是最有希望的替代sio _ 2的栅介质材料之一。 |
