| 1. | Schroedinger ' s equation in three dimensions : central potentials , and introduction to hydrogenic systems
三维薛丁格方程式:中心位势以及介绍类氢系统。 |
| 2. | Scaling of hydrogenic impurity binding energy and virial theorem in semiconductor quantum wells and wires
半导体量子阱和量子线中杂质束缚能的度规法则与维里定理 |
| 3. | Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots
族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响 |
| 4. | Weber et al have calculated the density of impurity and energy spectra of hydrogenic impurities in rectangular cross section qwws without considering the effects of external fields
Weber等人在不考虑外场的情况下讨论了矩形量子阱线中类氢杂质的dois和能谱。 |
| 5. | In the past 20 years , hydrogenic impurities in low dimensional semiconductor structures have been studied extensively . impurities play an important role in the transport properties and optical properties of these structures
自80年代以来，低维半导体材料中杂质态的各种性质引起了人们的广泛关注，杂质对于材料中的电子输运及光学性质都有重要影响。 |
| 6. | We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field
我们开创性的把它应用到处理有抛物线量子阱中的束缚极化子，得到了有外电场的量子阱中，类氢杂质中的电子基态能量的解析结果。 |
| 7. | In the first part , the scaling rule for the hydrogenic impurity binding energy and the virial theorem value ( potential - to kinetic - energy ) in infinite quantum wells and quantum wires of rectangular cross - section with three different aspect ratios are studied through the variational method
在第一部分，利用变分法计算了无限深gaas矩形量子线和量子阱中类氢杂质束缚能的度规法则和维里定理值。 |
| 8. | Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively . electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction , reflection and photoluminesce - nce ) of semiconductor quantum well structures
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质(如吸收、反射、光致发光等) 。 |
| 9. | In the first part , following ref [ 27 ] , the expression of the envelop function is obtained . then , considering the dismatch of effective mass between the well and the barrier , using the variational approach , we calculate the binding energy of hydrogenic impurity
在第一部分，我们按照文献[ 27 ]中的方法，得到了包络函数的表达式，并利用变分法计算了类氢杂质的束缚能，其中考虑了阱垒中电子有效质量的失配性。 |
| 10. | In this paper , based on the previous works , we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail . using variational approach , we calculate the binding energy and the photoionization cross - section of the impurity in the system
本文在前人工作的基础上，详细研究了矩形截面gaas ga _ ( 1 - x ) al _ xas ( x = 0 . 3 )量子阱线中的类氢杂质体系的性质，采用变分技术计算了此体系的束缚能及其光致电离截面。 |
