This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted , which is for short channel mos field effect transistor specially . these works are presented in this paper . 1 本论文选取目前业界占主流地位的bsim3 ( berkeleyshort - channeligfetmodel )为将要提取的模型，它是专门为短沟道mos场效应晶体管而开发的一种模型。
