| 1. | Iii - v semiconductors are important candidate materials for optoelectronic devices
-族化合物半导体是制作固体发光器件的重要材料。 |
| 2. | Varshni , y . p . " band - to - band radiative recombination in groups iv , vi , and iii - v semiconductors ( i ) . " phys . stat . sol . 19 ( 1967 ) : 459 - 514
一篇完整描述在半导体中光学再结合过程的论文，主要强调放射性再结合。 |
| 3. | Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide
半导体工艺材料的检验. -化合物单晶体错位的测定 |
| 4. | Current optical chips , of the kind used as lasers in cd players and as photodetectors in telecommunications switches , are manufactured from iii - v semiconductors
目前cd唱盘里的雷射，以及电讯开关里的光侦测器之类的光学晶片，是以第iii族与第v族半导体制成的。 |
| 5. | Some results are interesting , for example , in our calculation , there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface . but there are different rumple occurs . unlike the iii - v and ii - vi semiconductors , there are no surface states in the fundamental gaps
在表面电子结构特征方面，与111一v族和n一vl族化合物不同，基本带隙中不引入表面态，而在导带顶和价带底附近以及更深能级中出现表面态或表面共振态等。 |
| 6. | It is until the eighties of the twentieth century the technique applied to prepare films such as diamond , bn and sic , etc . in this thesis , we first introduced the research on bn films and its development , properties and application of this interesting iii - v compound
首先在统计大量文献的基础上，分析了bn薄膜的研究、发展和趋势。总的研究趋势是波动上升的，但近年来cbn的研究呈现回落趋势。另一方面， hbn薄膜的研究逐渐受到关注。 |
| 7. | Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance . the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
Gaas晶体是一种电学性能优越的-族化合物半导体材料，以其为衬底制作的半导体器件及集成电路，由于具有信息处理速度快等优点而受到青睐，成为近年来研究的热点。 |
| 8. | Moreover , we give a further discussion on the numerical value calculation of temperature distribution . the main problem when we design the high duty - cycle high power laser diode array we face is the large amount of heat during its operation . so we change the proportion of some ingredients and the concentration of the dopage to gain high quality iii - v material
在激光器阵列的设计过程中，针对大功率激光器严重的产热问题，尤其是高占空比工作时，会有更多的功率转化为热的现象，我们改进芯片材料的配比、掺杂，提出适应高占空比工作的器件版图结构。 |
| 9. | In this work of part 1 , as a main body of this dissertation , multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0 . 05 % to 3 . 1 % . in part 2 , the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied
随着与氮有关的化合物半导体在短波发光器件(如蓝色发光二极管和紫色激光器件等)方面的巨大应用潜力和发展， gapn作为一种新型的含氮-族化合物半导体材料，其光电性质引起了人们的关注。 |
| 10. | Moke and fmr studies were performed on epitaxial single crystalline fe ph . d thesis ; investigations of magnetic properties on magnetic thin , ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ) . the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy , and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films . it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
对于外延生长在inas衬底上、厚度为8 - 25ml的超薄fe单晶膜进行了铁磁共振和磁光研究，获得以下几点结果： ( 1 )膜厚在8 - 25ml之间时，薄膜面内的磁晶各向异性为四度对称各向异性，垂直单轴各向异性比同厚度的fe gaas系统小许多，而立方各向异性则比fe gaas系统更接近bcc结构的fe 。 |
