| 1. | Positron lifetime study of defects in undoped si - inp
中缺陷的正电子寿命研究 |
| 2. | Activation of fe doping and electrical compensation in semi - insulating inp
的铁掺杂激活与电学补偿 |
| 3. | Preparation of semi - insulating material by annealing undoped inp
高温退火非掺杂磷化铟制备半绝缘材料 |
| 4. | Performance of a self - aligned inp gainas shbt with a novel t - shaped emitter
单异质结双极晶体管的性能 |
| 5. | Investigation of residual donor defects in undoped and fe - doped lec inp
非掺及掺铁磷化铟中的残留施主缺陷 |
| 6. | 1550nm polarization - insensitive semiconductor optical amplifier based on algainas - inp
偏振无关半导体光放大器 |
| 7. | Non - stoichiometry related deep level defects in semi - insulating inp
半绝缘磷化铟中与非化学配比有关的深能级缺陷 |
| 8. | Influence of fe doping concentration on some properties of semi - insulating inp
掺铁浓度对半绝缘磷化铟的一些性质的影响 |
| 9. | Study of compensation defects in undoped semi - insulating inp by positron lifetime spectroscopy
中补偿缺陷正电子寿命谱的研究 |
| 10. | Morphology of low temperature buffer layers and its influence on inp epilayer growth
低温缓冲层的表面形貌及对其外延层生长的影响 |
