Chinese translation for "rheed"

反射高能电子衍射能谱

Example Sentences:

	1.	C ( 2x2 ) and ( 2x2 ) reconstructions obtained under different annealing temperthees a - nd different er coverages are observed by rheed observations 不同退火温度下， ccx2和px2 ）再构被分别观察到。
	2.	For system with growth modes transition , different growth stages can be analyzed by different theory respectively , combined with rheed 对于具有生长模式转变的体系,可以由上述理论结合rheed分析不同阶段的应变过程和与之对应的生长模式。
	3.	By using theoretical calculation and rheed monitoring , the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally 通过理论预测和rheed的检测,控制氧化物薄膜生长,特别是控制铁电氧化物薄膜生长中的应变行为。
	4.	When the thickness increases to upon the critical value , the chemical valence of element ni in the top layers of lno film deposited in the relatively low oxygen pressure is + 3 当氧分压在临界值以上时, lno薄膜在整个沉积过程中(膜厚小于30nm )的rheed图样是条纹状,表明层状方式外延生长的特征。
	5.	The reflection high - energy electron diffraction ( rheed ) was used to monitor the surface of insb in situ during the epitaxial growth , rheed diffraction pattern indicates volmer - weber growth at the very early stage of nucleation 低温insb缓冲层在生长初期显示明显的岛状生长,通过rheed强度振荡的观察,确定低温insb缓冲层的生长速率为0 . 26 m / h 。
	6.	Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ) . in the relatively low oxygen pressure , lno film displays spotty rheed pattern 首先,通过原位高能电子衍射( rheed )及x光电子能谱( xps )研究了氧分压对lno导电薄膜微结构的影响,并进一步提出了氧分压对lno薄膜微结构的影响的机理。
	7.	The ultra - thin er layers with the thicanesses in the range of 0 . 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system . after annealing at lower temperatures , ordered simcfores form on the surface . the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed ) 本文是关于硅( 001 )衬底与电子束淀积的铒、铪原子反应形成的超薄膜的界面与表面性质的研究，以及在该衬底上出现的共振光电子发射现象，包括了以下四个方面的工作： 1铒导致的硅( 001 )衬底上的( 4 2 )再构研究利用反射高能电子衍射和低能电子衍射，在室温淀积了0
	8.	Besides , the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ) . the rheed images and intesity oscillation are collected by computer system . it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500 . atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature . the analysis were compared to simulation results . the experiment results indicated it was easy to form clusters when the rate of growth is high or 此外,本文通过反射式高能电子衍射( rheed )监测了gasb外延薄膜的生长,利用rheed强度振荡的计算机采集系统实现了rheed图像和rheed强度振荡的实时监测。实验发现在400生长的gasb薄膜为非晶态,温度升高到500薄膜转变为单晶。利用原子力显微镜对不同生长速率和衬底温度生长的gasb薄膜的表面形貌进行观察分析,并与模拟结果进行比较。
	9.	The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of 对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。

Similar Words：

"rhee soo-hyoo" Chinese translation, "rhee suk hi" Chinese translation, "rhee suk-hi" Chinese translation, "rhee yong man" Chinese translation, "rhee yong-man" Chinese translation, "rheedia" Chinese translation, "rheem manufacturing co" Chinese translation, "rhees" Chinese translation, "rheeze" Chinese translation, "rhegas" Chinese translation