| 1. | Sih4 gas for electronic industry - silane
电子工业用气体硅烷 |
| 2. | We studied the relationship of pressure , flux of sih4 and substrate temperature with deposition rate of a - si : h films
我们研究了工作气压、 sih _ 4气体流量和衬底温度等工艺条件与a - si : h薄膜沉积速率的关系。 |
| 3. | Third , we designed a waste gas disposing equipment , through which the danger gases such as sih4 can be get rid of by the nitrogen diluting and the rinsing of alkali solution
设计并制作了尾气处理装置，使设备排出的尾气能够经氮气稀释和碱水清洗而除掉其中的sih _ 4等易燃有害气体。 |
| 4. | The dissertation mainly focuses on variation of the structure of a - si : h as functions of the dilution ratio of h2 / sih4 , substrate temperature and substrate position at low microwave power
在低微波功率下，本论文着重研究了h2 sih4稀释比、衬底温度和衬底位置对a - si ： h薄膜结构的影响。 |
| 5. | Without using the doping of ge , plasma enhanced chemical vapor deposition ( pecvd ) of thick silica films on si substrates with gas mixtures of sih4 and n2o has been investigated
实验以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积( pecvd )技术，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。 |
| 6. | We experimented by varying the dilution ratio of h2 / sih4 at different substrate position , and found that the optimum dilution ratio of h2 / sih4 of system depends on substrate position
在不同的衬底位置，我们进行了h2 sih4稀释比影响a - si ： h薄膜结构的实验，发现系统最佳h2 sih4稀释比依赖于衬底位置的变化而变化。 |
| 7. | The synthesis of sic whisker is an interesting research activity . - sic whiskers have been grown on si substrate with ni film as its catalyst and a mixture of c2h2 - sih4 - h2 as precursor via chemical vapor deposition technique in this dissertation
本论文采用化学气相沉积方法,以ni薄膜为催化剂,以c2h2 、 sih4为反应气体,以h2为载气,在si基片上生长- sic晶须。 |
| 8. | The shape of the sic whiskers produced by carbon nanotube - reaction is consistent with that of the starting carbon nanotubes , and the whisker is hollow . - sic whiskers were also prepared by the reaction between c2h2 and sih4 with cnts as a template
而c纳米管限域法是指:先在1150下分解c2h2合成c纳米管,再以c纳米管为模板,以c2h2与sih4反应生成sic晶须的方法。 |
| 9. | The structure of the micro differential capacitance is optimized by use of the ansys software . 3 . when sih4 reacts with nh3 in a plasma - enhanced chemical vapor deposition ( pecvd ) equipment , a thin film of si3n4 is deposited on the si film
2 .研究了微电容式压力传感器的差动电容结构设计和微谐振式压力传感器的微谐振子结构设计,利用ansys软件对微差动电容的结构进行了优化设计。 |
| 10. | The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman
对以硅烷为原料气采用常压化学气相沉积制备的薄膜，利用tem 、 hrem 、 xps 、 sem 、 raman等手段系统研究了沉积温度、退火后处理等制备工艺对薄膜微结构的影响，分析了微结构的成因。 |
