Chinese translation for "二次电子发射"

secondary electron emission
secondary emission

Example Sentences:

	1.	The empirical formula in the process of the secondary emission is analyzed ; the stabilization condition of vacuum surface flashover is deduced . the physics image of the vacuum surface flashover is described with the seea theory 本文分析了二次电子发射过程的经验公式，推导了真空表面闪络的稳定条件，以seea理论的观点描述了真空表面闪络发生的物理图象。
	2.	The dust charging associated with the electron beams including the secondary emission of dust can dominate the dust surface potential in the close cathode region . in this case , dust of the same size can levitate at two different positions in the cathode 另外还发现：在考虑极板有强电子束发射和尘埃粒子本身的二次电子发射时，同一大小的尘埃粒子能够悬浮在鞘层中两个不同的位置。
	3.	Based on the energy band characteristics of ordinary negative electron affinity emitter gaas , the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented , and the special negative electron affinity emitter gaas was designed 摘要根据通常负电子亲和势二次电子发射材料砷化镓的能级特点，提出延长负电子亲和势二次电子发射材料砷化镓的逸出深度的理论设计，设计出了特殊的负电子亲和势二次电子发射材料砷化镓。
	4.	In this paper based on the theory of the low energy electrons , the movement of the irons in the counter is analyzed . the theories of sputtering and secondary electron emission are discussed respectively . the irons " action and effect on the counter are putted forward 本文从低能电子发射机理入手，分析了计数管内部离子运动情况，讨论了离子溅射和二次电子发射，提出了离子与计数管内壁相互作用及其对计数管的影响，给出了计数管内壁表面处理仿真图。
	5.	A new model for the growth stage of surface flashover has been developed according to the experimental results , which is based on the solid band theory . it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization , the other is the micro - discharge caused by the trap centers of insulator . the trap cente 电子倍增的过程与材料的表面态直接相关，材料微观结构的变化和材料的表面处理都能够导致材料表面态的变化，引起材料的表面二次电子发射系数以及材料中陷阶密度和分布的改变，从而影响了电子倍增的过程，并进一步改变或影响了沿面闪络的发展过程。
	6.	This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid , the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid . by the constantly experiment and grabbling the different technology routes , we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid , and made its surface cladding quality very stable and reliable 本课题是基于整体提高电子管的质量和降低生产成本的要求,对电子管生产中的重要部分? ?栅极的表面处理技术进行改进和完善,主要在以下方面进行了深入研究:在钼栅极表面处理方面,主要为实现降低栅极的热电子发射和二次电子发射,通过不同工艺路线的不断试验和摸索,成功开发出栅极电泳tac 、 zrc和电镀铂黑的新工艺,使栅极的涂覆质量稳定可靠。
	7.	According to secondary electron emission avalanche ( seea ) theory , the effects of insulating materials , shapes , electrode structures of vacuum insulator on surface flashover and its mechanism , design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material , shape and electrode structure are reviewed 摘要根据二次电子发射崩( seea )理论，综述了真空绝缘子的绝缘介质材料、几何形状和电极结构对绝缘子沿面闪络的影响和机理过程，以及从这三方面优化设计真空绝缘子以提高其沿面闪络电压的方法。
	8.	The factors which influenced the process include the insulator ' s material , structure , the distribution of space electrical field , the way to deal with the surface , the characteristic of voltage waveform , pulse width etc . there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr ) 影响该过程的因素包括绝缘材料结构、空间电场分布、表面处理方法、所加电压特征，脉冲宽度等。研究真空表面闪络过程有两类理论：二次电子发射崩溃( seea )和电子引发极化松弛( etpr ) 。
	9.	Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter gaas in theory , it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter gaas will become smaller , while when primary electron energy is higher the deviation will increase 通过对两种负电子亲和势二次电子发射材料的二次电子发射系数的理论值进行比较和分析，得出：当原电子入射能量较低时，两种材料的二次电子发射系数差值较小；当原电子入射能量较高时，两种材料的二次电子发射系数差值较大，而且随着原电子入射能量的升高，两种材料的二次电子发射系数差值也在增大。

Similar Words：

"二次电子倍增效应" Chinese translation, "二次电子传导" Chinese translation, "二次电子导电" Chinese translation, "二次电子导电靶" Chinese translation, "二次电子导电摄像管" Chinese translation, "二次电子发射倍增" Chinese translation, "二次电子发射倍增器" Chinese translation, "二次电子发射比" Chinese translation, "二次电子发射电极" Chinese translation, "二次电子发射面" Chinese translation