| 1. | Dosimetry of 60co - ray low dose irradiation on spleen
重过滤低剂量率照射剂量学 |
| 2. | Effect of low - dose electric radiation on human ' s immune function
低剂量率电离辐射对人体免疫功能的影响 |
| 3. | Examination and maintenance of low dose rate of the varian cl2300c d medical linear accelerator
型直线加速器低剂量率故障应急检修一例 |
| 4. | In addition , research on radiation effects of mos capacitor implanted bf2 + at low dose rate are also made in short
此外，本文还开展了bf _ 2 ~ +注入mos电容低剂量率辐照效应的研究工作。 |
| 5. | The radiation effects of mos devices implanted bf2 at low dose rate are investigated in some different respects in this paper
本文从不同方面对bf _ 2 ~ -注入mos管低剂量率辐照效应进行了深入的研究。 |
| 6. | The results show that enhanced low - dose - rate sensitivity ( eldrs ) exists in both domestic and imported bipolar transistors , and the npn transistors are more obvious than pnp transistors
结果表明：在辐照的剂量率范围内，无论是国产还是进口的双极晶体管，都有明显的低剂量率辐照损伤增强现象，且npn管比pnp管明显。 |
| 7. | The table on the right shows the probability of getting fatal diseases due to exposure to radiation . this risk factor table roughly shows the relationship between radiation doses and its effects on human body
到目前为止，有关辐射效应与剂量的关系的资料还是非常贫乏，尤其缺乏人群在小剂量及低剂量率时的资料。 |
| 8. | This risk factor table roughly shows the relationship between radiation doses and its effects on human body . it should be note that experimental data for dose - effect relationship are still scanty , especially for low doses and low dose rates
到目前为止，有关辐射效应与剂量的关系的资料还是非常贫乏，尤其缺乏人群在小剂量及低剂量率时的资料。 |
| 9. | Firstly , the theories relative to radiation effect are discussed in brief , including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices . besides , the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too
首先，对有关辐照效应的理论进行了简要的叙述，介绍了辐照过程中氧化物陷阱电荷的产生过程以及界面态建立的一些模型，另外，还对低剂量率辐照效应以及bf _ 2 ~ +注入加固mos器件的机理做了回顾。 |
| 10. | Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。 |
