| 1. | The initiative adsorption of molecular - sieves is a method to control the low temperature deposition contamination
主动吸附是控制低温沉积污染的措施之一。 |
| 2. | The cbd technique is a simple , inexpensive and convenient method for large area deposition , and yet a low - temperature deposition technique
该方法所用设备简单，能够实现低温沉积和大面积沉积。 |
| 3. | The optimal condition for p - sic film growth is found and nanocrystalline p - sic film is prepared under suitable condition
探索到了低温沉积- sic薄膜的最佳工艺条件，并在一定条件下制备出了纳米晶- sic薄膜。 |
| 4. | The effects of the gas system and proportion , different microwave power , different reaction pressure and different pretreatment methods of substrate and the position of substrate on the microstmcture of diamond films were respectively discussed in this paper
分别考虑气体系统及比例、微波功率、反应气压、基片处理方式和基片位置对低温沉积金刚石薄膜的影响。 |
| 5. | In this work , the aspects those impose influences on the performances of the ag films such as the pretreatment of the basic tubes , the concentrations of the reactants , the reaction time were investigated . apart fffm this , great attention ^ was given to the study on the parameters in the process of ag deposition in which low concentration and high temperature , or high concentration and low temperature was alternatively adopted
对银膜的制备工艺及影响银膜性能的因素如工艺条件、预处理过程、反应物浓度、反应时间等进行了研究，尤其对低浓度高温沉积银膜工艺与高浓度低温沉积银膜工艺的各影响因素进行了研究。 |
| 6. | The result shows that argon gas can not only promote the excitation of plasma at low pressure , but also improve discharge state , increase the density and activation of reaction radical and improve the quality of diamond films . on the other side , argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules
结果表明，气体系统中引入氩气一方面不仅有利于维持低压放电，而且改善放电状态，提高反应活性基浓度和活性，提高低温沉积金刚石膜的质量；另一方面，由于其大的电离截面使其和电子碰撞的几率大大提高，对等离子体进行冷却，有利于基片温度的降低。 |
| 7. | The results show that ti2n ( 200 ) tropism interplanar is obtained when the ion beam energy is 875ev and the current is 60ma . the ti2n crystals embed in the films deposited at low temperature , while tin crystals are formed at high temperature . the analyses of component show that the tiny films are rich - nitrogen
结果表明：在能量为875ev 、束流为60ma时获得取向较好的ti _ 2n ( 200 )晶面；低温沉积的薄膜的主晶相为ti _ 2n ，高温沉积时为tin ；成分分析表明tin _ y薄膜是富氮的。 |
| 8. | Typical temperature is 800 - 1000 in cvd diamond process , while the high temperature limits its application in optical window and coating such as gaas , zns etc . low temperature can not only make diamond crystal nucleus finer , reduce surface roughness of diamond films and lessen light dispersion , but also eliminate thermal stress
化学气相沉积金刚石膜过程中，衬底的典型温度为800 1000 ，这么高的温度限制了其作为gaas 、 zns等低熔点光学材料窗口和涂层的应用。低温沉积金刚石膜不仅可以使晶粒细化，降低表面粗糙度，减小光的散射作用，而且可以消除热应力。 |
| 9. | In this paper , the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method . the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed
本工作采用蒙特卡罗( monte - carlo )计算机模拟的方法，对以ch _ 4 h _ 2为源气体的电子助进化学气相沉积( eacvd )金刚石薄膜中的气相分解过程进行了研究，初步建立了eacvd气相动力学模型，并讨论了eacvd中的低温沉积过程。 |
| 10. | The roles that the hydrogen and the substrate negative bias play in the low temperature deposition of p - sic film were further well investigated . it was found that proper hydrogen concentration in gas flows and the corresponding substrate bias are the prerequisite for low temperature synthesis of p - sic film
北京工业大学工学博士学位论文一对氢气和衬底负偏压在b七薄膜低温沉积中的作用进行了研究，发现合适比例的氢气及相应的衬底负偏压，是低温制备上七c薄膜必须的条件。 |
