| 1. | The properties of a new photoacid generator for 193 nm photoresist
光致抗蚀剂用光产酸剂的性质分析 |
| 2. | Electron - beam photo - resist exposure
光致抗蚀剂的电子束曝光 |
| 3. | Accelerated aging of photoresist
光致抗蚀剂的加速老化 |
| 4. | Specification for photoresist e - beam resist for hard surface photoplates
硬面感光板中光致抗蚀剂和电子束抗蚀剂规范 |
| 5. | Calculating the contrast and threshold sensitivity of a positive photoresist
计算正性光致抗蚀剂的对比度和阈限灵敏度 |
| 6. | Progress in the synthesis of poly 4 - hydroxystyrene for polymer photoresists
用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展 |
| 7. | Determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching
测定在蚀刻期间光致抗蚀剂同硬表面光掩膜坯及半导体片的有效粘附性 |
| 8. | Testing of materials for semiconductor technology ; methods for characterizing photoresists ; determination of coating thickness with optical methods
半导体工艺材料的检验.表示光致抗蚀剂特性的方法.第1 |
