| 1. | Cm3 and it would increase with the increased deposition power
并且其密度随着沉积功率增大而增加。 |
| 2. | But the disorder degree of structure decreased alongside the increase of deposition power
随着沉积功率增大，掺胺碳膜网络结构中原子排列的有序度增大而无序度减少。 |
| 3. | The ir spectrum showed that there existed amino - group in the network structure of ctc : h film decreased along with the increase of deposition power
薄膜样品的红外光谱分析结果表明，胺基团已被成功掺入薄膜的网络结构中。并且薄膜中胺基团含量随着沉积功率增大而减少。 |
| 4. | When the sputtering power is lower than 300 w the sputtering rate increases slowly ; when the sputtering power is higher than 300 w the sputtering rate increases rapidly , so there exists a threshold
但在300w以下，溅射功率增大，溅射速率增加较慢；当功率大于300w后，溅射速率增大变快，即存在一“阈值” 。 |
| 5. | How sputtering power , substrate temperature and gas flow influenced the properties of cohesion are studied . results show that the increase of sputtering power has positive affection
研究了溅射功率、衬底温度和气体流量对cu ag薄膜与cdznte衬底的附着性能的影响，发现溅射功率增大对薄膜的附着性能有积极作用。 |
| 6. | The experiments indicate that the deposition rate will increase with the increase of the flow ratio of sihu / nhs , slightly decrease with the increase of substrate temperate , and increase obviously with the increase of rf power
氮化硅薄膜的折射率随硅烷氨气流量比增大而增大，随温度升高而略有增加，随淀积功率增大而略为降低。 |
| 7. | By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia , silicon nitride thin film with excellent anti - reflective and passivation effects was prepared . the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated . the effects of substrate temperature , the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
实验表明，氮化硅薄膜的沉积速率随硅烷氨气流量比增大而增大，随温度升高而略有降低，随淀积功率增大而明显增加；在衬底温度300 ，射频功率20w和硅烷氨气流量比为1 ： 3的条件下氮化硅薄膜的沉积速率大约为8 . 6纳米分。 |
