| 1. | This probability is related to the quantum wave amplitude in the barrier region .
这个几率与势垒区内的量子波振幅有关。 |
| 2. | Electrons from the metal will have to surmount the potential barrier to enter the semiconductor .
金属中的电子必须克服这个势垒层才能进入半导体。 |
| 3. | The transmission factor describes the gradual opening of a fission channel as the energy approaches the fission barrier .
透射因子描述了当能量趋近于裂变势垒时裂变逐渐地开放。 |
| 4. | Transmittal coefficient of toothed barrier in superlattice
势垒的穿透系数 |
| 5. | Diffusion capacitance barrier current furnace
扩散电容势垒电流炉 |
| 6. | The effects of different donor - doping on batio3 lptc thermal resistor
二氧化钛压敏电阻势垒高度的测定 |
| 7. | Electronic structure and magnetic properties of ce1 - xyxfe2 compounds
势垒层表面态及其他局域态性质研究 |
| 8. | Effect of ionic vacancies on potential barrier at grain boundaries in batio
钛酸钡陶瓷离子缺位对晶界势垒的影响 |
| 9. | Numerical simulation of current - voltage characteristics in a double barrier system
双势垒系统伏安特性的数值模拟 |
| 10. | Simulation for metal - semiconductor - metal - photodetector msm - pd circuit based - on pspice
的肖特基势垒光电探测器的模拟 |
