Measuring methods of photocell - inverse breakdown voltage 光电池测量方法反向击穿电压
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Breakdown reverse voltage 反向击穿电压
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A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy . the sige hbt 室温下该晶体管的直流电流增益为30到50 ，基极开路下，收集极-发射极反向击穿电压
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High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination 由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
