| 1. | And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中还提出了一个新的sicmosfet反型层薄层电荷数值模型。 |
| 2. | Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
对6h sic反型层迁移率进行的moniecaro模拟结果表明，库仑中心的相关性，库仑电荷量及电荷中心和sic侣。 |
| 3. | A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 |
| 4. | Firstly , a new interface roughness scattering model is developed using exponential autocovariance functions . the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data
先推导了一种sic反型层表面粗糙散射的指数模型，研究证明应用此模型能够更精确地研究sicmos沟道载流子的输运规律。 |
| 5. | It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。 |
| 6. | Then , a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation
当有效横向电场较低时，库仑散射在sic反型层的电子输运中起主要散射作用，而当有效横向电场升高时，表面粗糙散射的作用会变得愈来愈显著。 |
| 7. | In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet
本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。 |
| 8. | In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面质量对n沟sicmosfet性能的影响做了深入的研究：从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用sicmos反型层薄层电荷数值模型，研究了杂质不完全离化对p型6h - sicmosc - v特性的影响。 |
