| 1. | P - type gallium arensidep
型砷化镓 |
| 2. | Semiconductor discrete device . detail specification for type cso467 gaas microwave fet
半导体分立器件. cso467型砷化镓微波场效应晶体管详细规范 |
| 3. | Semiconductor discrete devices . detail specification for type cs0464 gaas microwave fet
半导体分立器件. cs0464型砷化镓微波场效应晶体管详细规范 |
| 4. | Semiconductor discrete devices . detail specification for type cs0524 gaas microwave power fet
半导体分立器件. cs0524型砷化镓微波功率场效应晶体管详细规范 |
| 5. | Semiconductor discrete devices . detail specification for type cs0536 gaas microwave power fet
半导体分立器件. cs0536型砷化镓微波功率场效应晶体管详细规范 |
| 6. | Semiconductor discrete devices . detail specification for type cs0513 gaas microwave power fet
半导体分立器件. cs0513型砷化镓微波功率场效应晶体管详细规范 |
| 7. | Semiconductor discrete devices . detail specification for type 2ek150 gaas high speed switching diode
半导体分立器件2ek150型砷化镓高速开关二极管详细规范 |
| 8. | Semiconductor discrete device . detail specification for gaas high - speed switching assembly for type ek20
半导体分立器件. ek20型砷化镓高速开关组件详细规范 |
| 9. | Semiconductor discrete devices . detail specification for type cs0558 gaas microwave dual gate fet
半导体分立器件. cs0558型砷化镓微波双栅场效应晶体管详细规范 |
| 10. | Semiconductor discrete device . detail specification for type cs0529 gaas microwave power field effect transistor
半导体分立器件. cs0529型砷化镓微波功率场效应晶体管详细规范 |
