| 1. | We shall take the typical emitter-to-base resistance as about 250 ohms .
我们取发射极基极电阻的典型值为250欧姆左右。 |
| 2. | The base region is always very much narrower than the emitter or collector regions .
基极总是比发射极和集电极薄得多。 |
| 3. | Does the collector current rise in equal steps for equal increments of base current ?
基极电流作等值增长时，集电极电流是否也相应地等值上升呢？ |
| 4. | The density of holes in the base is less than the density of free electrons in the emitter and collector .
基极中空穴的密度小于发射极和集电极中自由电子的密度。 |
| 5. | Vbe varies between 0 . 3 and 0 . 7 , depending onthe base current
Vbe的值处于0307之间,这取决于基极电流。 |
| 6. | A transistor has three electrodes , the emitter , the base and the collector
晶体管有三个电极，即发射极，基极和集电极。 |
| 7. | Base bias bleeder circuit
基极分压电路 |
| 8. | Transistor base current
晶体管基极电流 |
| 9. | Base transmission factor
基极传输因数 |
| 10. | Base contact diffusion
基极接触扩散 |
