Chinese translation for "基距"

basal spur

Related Translations:

距:  Ⅰ名词1.(距离) distance 短语和例子行距 the distance between rows of plants2.(雄鸡、雉等的腿的后面突出像脚趾的部分) spur (of a cock, etc.)Ⅱ动词(相距) be apart [away] from; be at a distance from 短语和例子相距不远 not far from each o

Example Sentences:

	1.	The optimal technological parameters of smco thin films were determined as 60mm distance between the target and the substrate , sow sputtering power and 1 . 1 pa ar pressure through thorgonal experiments 通过正交试验法得到了实验条件下镀制smco薄膜最佳的工艺参数：靶-基距6cm 、功率80w 、 ar气压强1 . 1pa 。
	2.	The relationship between spectrum and preparation conditions were studied in this paper . the results are listed as following . the transmission of ultrathin aluminum films increase evidently , when the working pressure arise . with the increase of sputtering time , the transmission of ultrathin aluminum films decrease linear 然后利用双光束分光光度计测定了其透光率,研究了透光性能与各制备条件之间的关系,发现,随着工作气压、基片温度、靶基距的增大,薄膜的透光率有不同程度的增大;但透光率随着溅射时间的增加而呈近线性下降。
	3.	It was concluded that , the structure of zno thin films were influenced by many working parameters such as substrate temperature , sputtering pressure , the distance between target and substrate and so on . meanwhile , the deposition rate of zno thin films was varied at different working parameters 结果表明，对于zno薄膜，薄膜的择优取向性与衬底温度、溅射气压、靶基距等工艺参数有很大关系，而与氩氧比例的大小无明显的关系；而且在不同工艺参数条件下，薄膜的沉积速率也呈规律性变化。
	4.	It was discovered through the experiment that , the structure and deposition rate of aln thin films varied with the varieties of substrate temperature , sputtering power , distance between target and substrate . xps spectra of aln thin film showed that al atoms and n atoms in the sample were schomichemetry . it was concluded through the afm spectra of aln thin films that surface morphology and roughness were widely varied with different thickness of the films 通过对aln薄膜的研究发现，衬底温度、溅射功率、靶基距对aln薄膜的择优取向性和沉积速率的影响很大； aln薄膜样品的xps分析表明，薄膜中al和n基本上为理想配比；而且从aln薄膜样品的afm图中可以看出，不同厚度的薄膜的表面形貌和粗糙度有很大不同。
	5.	Moreover , it was found that the microstructure and physical properties of dlc film were affected to some extent by the distance between target and substrate . when the distance between target and substrate increases , sp 3c content in the deposited dlc film decreases . accordingly , the value of surface roughness , microhardness , friction coefficient , residual stress and band gap became lower in the same way 此外，靶基距对dlc薄膜的结构和性能也有一定的影响，随着靶基距增加， dlc薄膜中的sp ~ 3c含量减少， dlc薄膜的表面粗糙度降低，显微硬度降低，摩擦系数减小，残余应力减小，光学带隙eg减小。
	6.	Firstly , the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus , and characterlized by n & k analyzer1200 , x - ray diffraction spectroscopy ( xrd ) , scanning electronic microscopy ( sem ) , alpha - step500 . and it was analyzed that the effect on performance and structure of films with the change of argon flow , total gas pressure , the substrate - to - target distance and temperature 第一、应用稳定的直流磁控溅射设备制备tio2减反射薄膜并通过n & kanalyzer1200薄膜光学分析仪、 x射线衍射分析( xrd ) 、扫描电子显微镜( sem ) 、 alpha - step500型台阶仪等仪器对薄膜进行表征,分析氧分压、总气压、工作温度、靶基距等制备工艺参数对薄膜性能结构的影响。
	7.	In the hipib film deposition , high purity graphite was employed as target . relations between process parameters and the microstructure , as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate , which affects the intensity and ion energy of hipib ablated plasma , and the temperature of substrate in the film deposition processes . the mechanism of film deposition by hipib ablated plasma was explored also 在薄膜沉积方面，利用高纯石墨作靶材，调整薄膜沉积过程中的靶基距(烧蚀等离子体密度、离子能量)和基片温度，研究实验工艺对hipib烧蚀等离子体方法制备的dlc薄膜的微观结构和宏观物理性能的影响，探讨了hipib烧蚀等离子体沉积dlc薄膜的成膜机理。
	8.	Sio2 films are prepared on silicon substrates in order to get the functions of the main experiment parameters such as rf power , gas flow , vacuum gas pressure , target - substrate distance and substrate temperature on deposition rate of films . the optimized parameters ranges are obtained by considering films deposition rate , composition and structure 在bms450型磁控溅射镀膜机上优化出了制备sio _ 2薄膜的工艺参数范围，并揭示了气体流量、射频功率、靶基距、衬底温度、溅射气压等参数对薄膜沉积速率的影响规律。
	9.	During the inspection by afm and sem , we found that the surfaces morphology of samples was even and smooth , the surface roughness was small . the films were composed of some excellent columnar crystallites . the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching 由以上对azo薄膜的组织结构和光电性质的研究,我们得到了用直流反应磁控溅射法制备azo薄膜的最佳工艺条件为:氧氩比0 . 3 / 27 ,衬底温度200 ,工作压强5pa ,靶基距7 . 5cm ,功率58w ,退火温度400 。

Similar Words：

"基久郎" Chinese translation, "基久林" Chinese translation, "基矩" Chinese translation, "基矩阵" Chinese translation, "基具" Chinese translation, "基距比" Chinese translation, "基俊" Chinese translation, "基卡" Chinese translation, "基卡奥" Chinese translation, "基卡博" Chinese translation