| 1. | The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes .
用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。 |
| 2. | 1 monocrystal or multicrystal silicon solar cell
1单晶硅或多晶硅太阳能电池板 |
| 3. | Isotropic texturing of multicrystalline silicon
各向同性腐蚀法制备多晶硅绒面 |
| 4. | , l . the texturing of multicrystal si solar cell
多晶硅太阳电池的绒面技术。 |
| 5. | Piezoresistive effect of polysilicon films at high temperature
多晶硅薄膜的高温压阻效应 |
| 6. | Solar battery : crystal solar cell , life time > 10 years
太阳能电池:多晶硅，使用寿命长达10年 |
| 7. | Hydrogenation of polycrystalline sige thin films by hot wire technique
热丝法氢处理多晶硅锗薄膜 |
| 8. | V groove isolation polycrystal backfill
型隔离槽的多晶硅填充 |
| 9. | A breakdown model of thin drift region ldmos with a step doping profile
器件多晶硅栅量子效应的解析模型 |
| 10. | Poly - silicon micromachined switch
多晶硅微机械开关 |
