| 1. | temperatures(around 950℃)will prevent stress-induced defect formation in a recessed structure(recess approximately land oxide growth approximately 2. 2μm).
温度在950上下就会避免在有凹槽的结构中形成应力诱发缺陷（凹槽约1m，氧化物层生长约22m）。 |
| 2. | Theoretical model of thermal conductivity in frost layer
霜层生长过程中的导热模型 |
| 3. | Single layer growth of strained epitaxy at low temperature
低温下应变外延层的单层生长 |
| 4. | Transfer characteristics and solid layer growth in a bubble column crystallizer
气泡塔熔融结晶器中传递与晶层生长 |
| 5. | Morphology of low temperature buffer layers and its influence on inp epilayer growth
低温缓冲层的表面形貌及对其外延层生长的影响 |
| 6. | Experiment investigation on distribution of ice crystal during initial period of frost growth
霜层生长初期冰晶体分布状况实验研究 |
| 7. | Influences of surface characteristics on frost formation on vertical cold plate with electric field
电场作用下竖直板表面特性对霜层生长的影响 |
| 8. | The research present situation and advancement of growth structure of nacreous layer are discussed
对珍珠层生长结构的研究现状与发展趋势予以了综述和讨论。 |
| 9. | The studies confirm that textured c60 film is a two dimensional nucleation and layer - by - layer growth mechanism
由实验结果可以推断出c _ ( 60 )单晶是一种二维成核，层?层生长机制。 |
| 10. | In light of them , matching pmosfet and nmosfet with strained si channel were designed . 2 . the epitaxy layers including lt ( low temperature ) si grow technicsare discussed
2 .研究了包括400下分子束外延法生长100nm的低温硅层的各外延层生长技术。 |
