Chinese translation for "平面工艺"

planar process

Related Translations:

连接工艺:  attachment procedure

电气工艺:  electric technology

食品工艺:  food science and technologyprocesses in the food industry

蒸发工艺:  evaporation technology

工艺鞋:  art and craft shoesart shoeshandicraft shoes

大片工艺:  full slicefull-slice

工艺项目:  operation item

封闭工艺:  encapsulation technology

装载工艺:  loading technique

工艺设计:  design for technologymethod engineeringmethods engineeringprocess designproduction engineeringtechnics designtechnological design

Example Sentences:

	1.	Other technologies have been researched . one is the transmission lines on p - type high - resistivity silicon 进一步研究了实现硅基微波传输线的两种硅平面工艺技术。
	2.	Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed - gate process 结果表明，采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。
	3.	It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。
	4.	A process compilation program is developed to generate process flows from schematic representations of planar semiconductor device by two steps : sorting the structures and generating the processes 针对采用平面工艺的半导体器件的结构信息，通过单元排序和工艺流程生成两个步骤，生成一个可以实现输入目标要求的工艺流程。
	5.	With powerful technology and advanced devices , adopted the special process , the products of sisemi have excellent high - temperature characteristic and reliability . sisemi has become a famous supplier of silicon power transistors for green illumination application in china 近年来，在吸收、消化引进技术的基础上，不断创新，深爱公司在4英寸生产线上采用三重扩散sipos钝化高压平面工艺稳定进行高压双极型器件规模化生产的工艺，荣获深圳市科技进步奖。
	6.	Have been several key techniques of making dif - pressure sensors such as plane technics , minuteness engine machining , static sealing etc . in the paper in the intellectualized researching field there are two ways which are examine - form , curve simulanting , to carry out dif - pressure sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of dif - pressure sensor error self compensation 论文首先讨论了差压传感器的设计原理，并对差压传感器中复合敏感芯片(差压、静压、温度)和整体结构进行了设计，还解决了差压传感器制作中的平面工艺、微机械加工、静电封接及真空充油等关键技术。
	7.	At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency 在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。
	8.	Based on silicon - piezoresistive method , the paper first gives the theory of array silicon piezoresistive pressure , acceleration sensor , and the design of its incorporated chip , microstructure and out - circuit . several key techniques of making array silicon piezoresistive pressure , acceleration sensor such as 1c technic , mems ( silicon - silicon direct bonding , anodic bonding , anisotropic etching ) is also studied . minuteness engine machining , anode bonding etc . in the paper there are three ways which are examine - form , curve simulanting , to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation , fusion technology etc . therefore , it providing referenced values of ways and directions for sensor system directing on 论文首先以硅压阻效应原理为基础，讨论了阵列式硅压力、加速度传感器的设计原理，并对阵列式硅压力、加速度传感器中集成敏感芯片(压力、加速度) 、总体结构和压力阵列的信号处理电路进行了设计，在阵列式硅压力、加速度传感器的研制中，还研究了半导体平面工艺、大规模集成电路技术、微机械加工技术(硅硅键合、静电封接、各向异性腐蚀)等关键技术的应用。
	9.	The one - way orientation of planar technology means some kinds of orders that exist between the units in the schematic structures of semiconductor devices . using these orders and some other limitations derived from the practice of semiconductor technology , we can gain a unique sequence of structure units 平面工艺的方向性，意味着半导体器件结构图中各个结构单元之间存在一定的加工先后顺序，利用这些顺序，并根据器件结构单元的实际情况，合理的引入工艺加工方面的限制，就可以得到唯一的结构单元加工顺序。

Similar Words：

"平面钢制管法兰盖" Chinese translation, "平面格子" Chinese translation, "平面格子；平面晶格" Chinese translation, "平面隔板" Chinese translation, "平面隔膜" Chinese translation, "平面构成" Chinese translation, "平面构架" Chinese translation, "平面构形" Chinese translation, "平面构造" Chinese translation, "平面鼓轮" Chinese translation