Chinese translation for "微缺陷"

microdefect

Related Translations:

缺陷系统:  defective system

缺陷灵敏度:  flaw sensitivity

关键缺陷:  critical defect

隐蔽缺陷:  hidden defects

功能缺陷:  functional deficit

撞击缺陷:  schlagstelle

缺陷子:  defecton

市场缺陷:  market failuremarket imperfections

缺陷管理:  defect management

缺陷检查:  defect detecting testdetection of defectsflaw inspection

Example Sentences:

	1.	Damage constitutive relationship involving void shape variation for pearlitic steel with fine laminar microstructure 考虑微缺陷形状的细片层状珠光体钢的损伤本构模型
	2.	In addition , we fabricated mesfet devices on lec si - gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm , saturated drain current and threshold voltage 并以lecsi - gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
	3.	This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate , which were provided by merchants from home and overseas , as well as their influence on electrical parameters 本文系统地研究了国内外各生产厂家提供的gaas衬底中用熔融koh腐蚀的位错、 ab腐蚀液腐蚀出的ab微缺陷的密度和分布情况以及它们对衬底电参数(电阻率、迁移率、载流子浓度)的影响。
	4.	It shows that at the stress concentration zone , changes of mfl were relatively weak with slight deformation of the specimens . with the deforming to plastic and further the changing of mfl exhibits more distinct , and when necking emerging a very intensive change takes place . it is indicated that magnetic memory effect is related to the microstructure of the material 经分析认为,磁记忆信号的这种变化与材料内部微观组织的状态有关,试件变形很小时,磁弹性效应对试件表面泄漏磁场的变化起主要作用;试件变形较大时,其表面泄漏磁场的变化主要受塑性变形区内位错聚集产生的微缺陷的影响。
	5.	Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication . at present there are variations in electrical properties across substrate slices . these are associate with deep levels , in particular el2 , which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses 研究证明， si - gaas衬底电学特性的不均匀与材料中深能级微缺陷，特别是el _ 2 (深能级施主，被认为是as的反位缺陷的复合体)有极大的关系，而这些深能级微缺陷又与热应力形成的长入位错有密切联系。
	6.	Abstract : the process defect , minor defect and key precess , their impact on quality and reliability , and the control method are introduced . the kdy control points , the parameter control scope and the requirement of process environment for high quality and reliability device are discussed 摘要：重点介绍了国内外半导体器件制造工艺与器件可靠性的相关性报道：缺陷、微缺陷、关键工艺对器件质量和可靠性的影响及其控制方法；还介绍了关键工艺控制点的确定及其参数控制范围以及生产高质量、高可靠性器件的工艺环境的控制要求。
	7.	The experimental results showed that firstly , the distribution of resistiveity , mobility , carrier concentration , epd and ab - epd in gaas substrate was not uniform ; secondly , the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly , mesfet devices performance correlated with ab microdefects ; last , as shown by pl mapping results , it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices 实验结果表明， lecsi - gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab - epd 、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高， pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。
	8.	As recent research and productive practice showed , such conventional parameters as dislocation densiry ( epd ) , charge carrier concentration , mobility were not enough to evaluate the si - gaas material ' s quality , let alone revealing the relationship between the quality of material and the performance of devices . on the other hand , recent research showed that ab microdefects had direct relationship with device performance , whose density ( ab - epd ) was more important than epd for revealing the relationship between the quality of material and the performance of devices 近些年来的科研和生产实践均表明，现行的常规参数，如位错密度、载流子浓度、迁移率等对表征半绝缘砷化镓材料的质量是不充分的，特别是不能反映材料质量与器件性能之间的关系。近期的科研成果证明， ab微缺陷与器件性能有直接的关系，而且ab微缺陷密度( ab - epd )是比位错密度更加敏感、更加重要的参数。
	9.	In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last , use high resolution tem and eds to observe and identify the nature of microdefects 发现几乎所有高位错密度的si - gaas单晶的表层都具有网络状胞状结构或系属结构，首次对该胞状结构和系属结构的形成机制进行了研究；直接观察微缺陷，配合eds (能量色散谱)鉴定si - gaas中微缺陷的物理本质，同时分析其产生原因，讨论与位错的相互作用。

Similar Words：

"微全息摄影术" Chinese translation, "微全息图" Chinese translation, "微全息照相术" Chinese translation, "微缺的" Chinese translation, "微缺口试验" Chinese translation, "微缺陷检验方法" Chinese translation, "微扰" Chinese translation, "微扰的角关联" Chinese translation, "微扰动安定性" Chinese translation, "微扰动法" Chinese translation