Chinese translation for "扩散工艺"

diffusion process
diffusion technique

Related Translations:

扩散回路:  irradiation loop

扩散反应:  diffusion reaction

烟扩散:  diffusion of smoke

扩散传输:  diffuse transmission

扩散渗析:  diffusion dialysisdiffusive dialysis

扩散热处理:  diffusing heat treatment

扩散效应:  diffusing effectdiffusion effectdiffusional effectspread effectspreading effect

冰扩散:  ice divergence

扩散涂料:  diffused coating

扩散梯度:  diffusion gradient

Example Sentences:

	1.	The conversion efficiency of 14 % is possible if the al back surface field and the diffusion process are improved L 。若进一步改善铝背场及扩散工艺条件，有望达到14的效率。
	2.	Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized 重点介绍了目前开管ga扩散工艺的发展现状和开管扩镰晶体管负阻效应的研究现状。
	3.	Same difficulties in the fabrication process of lithium niobate devices , such as ti diffusion waveguide fabrication , ti film left - off , had overcame , and it provide the foundation for further investigation 克服了铌酸锂光开关制作过程中ti扩散工艺、 ti膜提浮工艺、电极套刻和抛光工艺等难题，为进一步进行铌酸锂器件的研究打下了坚实的基础。
	4.	With the development of doping technology , the formation of the base region in high - voltage transistor can be made by b diffusion technology , b - a1 paste - layer diffusion technology , close - tube ga - diffusion technology and open - tube gallium - diffusion technology 随着掺杂工艺的不断发展，高反压晶体管基区的形成经历了扩硼工艺、硼铝涂层扩散工艺、闭管扩镓工艺到开管扩镓工艺的发展。
	5.	At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency 在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。
	6.	But an alternative simpler method is through the proton exchange ( pe ) process at lower temperature . pe waveguides exhibit larger increment of the index and lower waveguide loss than ti indiffusion waveguides . however , pe waveguide devices have n ' t been fully mature 质子交换与传统的钛扩散工艺相比制作十分简单，制备的波导具有较高的折射率增量、较小的波导损耗、较强的抗光折变能力，不但能大大降低成本而且还可以提高性能，但是质子交换波导器件目前尚未成熟。

Similar Words：

"扩散高度" Chinese translation, "扩散高台晶体管" Chinese translation, "扩散隔离" Chinese translation, "扩散隔离cmos" Chinese translation, "扩散隔膜" Chinese translation, "扩散工艺用载体" Chinese translation, "扩散管" Chinese translation, "扩散管道" Chinese translation, "扩散光" Chinese translation, "扩散光 漫射光 弥散光" Chinese translation