| 1. | Electron-beam lithography with a novel multilevel resist structure defines the pattern .
采用新型的多层抗蚀剂结构的电子束光刻来形成图形。 |
| 2. | An image of the patterns on the mask is projected onto the resist-coated wafer, which is many centimeters away .
掩膜板上图形的像被投影到许多厘米以外的涂有抗蚀剂的片子上。 |
| 3. | The properties of a new photoacid generator for 193 nm photoresist
光致抗蚀剂用光产酸剂的性质分析 |
| 4. | Preparation of photoresist for analysis of inorganic contaminants
无机污染物分析用光致抗蚀剂的制备 |
| 5. | Electron - beam photo - resist exposure
光致抗蚀剂的电子束曝光 |
| 6. | Accelerated aging of photoresist
光致抗蚀剂的加速老化 |
| 7. | Resist plasma ashing system
等离子体抗蚀剂灰化系统 |
| 8. | Test methods for testing photoresists used in microelectronic fabrications
微电子器件制造用光敏抗蚀剂的试验方法 |
| 9. | Specification for photoresist e - beam resist for hard surface photoplates
硬面感光板中光致抗蚀剂和电子束抗蚀剂规范 |
| 10. | Calculating the contrast and threshold sensitivity of a positive photoresist
计算正性光致抗蚀剂的对比度和阈限灵敏度 |
