| 1. | The thermal quenching of er pl tends to decrease with an increase in the n concentration in er doped a - si : h
随着n掺杂浓度的增加， erpl的热猝灭效应下降。 |
| 2. | We get the conclusion : the higher the doping density is , the shorter grading length is wanted to make the spike vanish
并且得出结论： n型掺杂浓度越高，消除尖峰所需的渐变长度越短。 |
| 3. | It is found that with the increase of ho3 + doped concentration , the highest luminescence peaks at the blue band shift towards long wavelength
随着ho ~ ( 3 + )掺杂浓度的变化，蓝光段的主要荧光峰向长波方向移动。 |
| 4. | The magnetic moments per cr atom vary significantly with cr concentration , and the trend of variation is in agreement with that of the experiment
计算结果表明cr原子的磁矩随掺杂浓度有明显的变化,变化趋势和实验吻合。 |
| 5. | The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0 . 6 at . % )
除了改进冷却控温系统外，选择掺杂浓度较低的激光晶体，有利于高效散热，得到更稳定的激光输出。 |
| 6. | On the other hand , relationship between doping concentration , phase transition temperature , magnitude of resistance change and hysteresis width was investigated
在此基础上,本文进一步探讨了掺杂浓度与vo _ 2薄膜相变温度、电阻突变数量级以及热滞宽度的关系。 |
| 7. | The hydrogen source used is high purity of 99 . 9999 % . for comparison , the annealing treatments were processed under ambient pressure in air and nitrogen atmosphere respectively
在kno3溶液中进行液相搀杂的纳米碳管，其储氢能力明显提高，并且随掺杂浓度增加而提高。 |
| 8. | Double cladding fiber characteristic parameters ( doped rare - earth concentration in core , confinement factor , absorption cross and emission cross ) are calculated theoretically
理论计算了双包层掺杂光纤特性参数(纤芯的稀土掺杂浓度、限制因子、吸收截面和发射截面) 。 |
| 9. | The difficulty can be overcomed that the n atom is not easy to be doped into zno . if we control the annealing condition , the residual nitrogen atoms will become acceptors in zno : n films
通过这种方法可以克服n原子不容易惨杂进氧化锌的困难，并且可以通过控制退火过程来控制n原子< wp = 5 >的掺杂浓度。 |
| 10. | 3 、 after the assuredness of the dopant and the depth of the layers , associating the chief technology directive , the structural parameters of the device are obtained and theoretically checked
3 、确定了各层结构的掺杂浓度和厚度后,结合主要技术指标得出了器件的结构参数,并对主要参数进行了理论核算。 |
