| 1. | Synthesis and dimension control of nanometer - sized - semiconductors
族半导体纳米材料的制备与尺寸控制 |
| 2. | Recent progress in synthesis of - group semiconductor nanometer particles
族半导体纳米粒子合成的进展 |
| 3. | Study on the adsorption property to n2 on the surface of - semiconductor nanocrystals
族半导体纳米晶体表面对氮分子的吸附作用 |
| 4. | Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。 |
| 5. | Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3 . 37ev 。 |
| 6. | Current optical chips , of the kind used as lasers in cd players and as photodetectors in telecommunications switches , are manufactured from iii - v semiconductors
目前cd唱盘里的雷射，以及电讯开关里的光侦测器之类的光学晶片，是以第iii族与第v族半导体制成的。 |
| 7. | Wide band - gap ii - vi semiconductor materials such as zns , znse have been thought as one of the most import materials for their potential in the optoelectronic
宽带?族半导体材料如zns 、 znse因其优异的光电特性成为蓝绿半导体发光和激光光电子器件的重要候选材料。 |
| 8. | The material studied in this paper is a novel kind of semiconductor material which is fabricated by incorporating magnetic transition metal ion mn + into ih - v semiconductor compound gaas
本论文所研究的dms材料便是由磁性过渡族金属离子mn ~ +掺入-族半导体化合物gaas中而形成的一类新的半导体材料。 |
| 9. | As a direct wide - band - gap ii - vi semiconductor , znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes , nonlinear optic - electronic components and infrared devices
Znse作为最重要的宽禁带-族半导体，其单晶在兰绿光发射器件、非线性光电器件和红外器件方面有着广泛的应用。 |
| 10. | Usually , gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant . however , as a mature semiconductor material , si has serves electronics greatly
以往的宽带-族半导体都是以gaas为衬底材料的，这就造成了宽带-族半导体光电子材料与si基微电子技术的分离。 |
