| 1. | The concepts described above are embodied in the junction transistor .
上述各种概念都反映在结型晶体管中。 |
| 2. | Additional noise contributions are due to the statistical fluctuations of the processes in the valves and transistors .
其他噪声的产生来自电子管和晶体管中电过程的统计起伏。 |
| 3. | The test indicated that one transistor in every ten was out of order
试验表明,每十只晶体管中有一只是坏的 |
| 4. | In a bipolar transistor , the control area or the electrical connection to the control area
在双极晶体管中,指控制区域或和控制区相连的导电连接。 |
| 5. | Magnetoresistance effect of double - barrier magnetic tunneling junction applied in spin transistors
双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用 |
| 6. | In the transistor , the output current depends on the input current , hence it is a current - operated device
在晶体管中，输出电流依赖于输入的电流，因此它是一个电流控制器件。 |
| 7. | The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ) , which in the semiconductor equipment
提供一种半导体装置，在向负载( el像素及信号线)供给电流的晶体管中，可以不受偏差的影响供给正确的电流。 |
| 8. | It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base , the spin relaxation time and the width of the base
自旋晶体管中的电流放大系数主要取决于注入基区的自旋极化电子的极化程度，基区中自旋的驰豫时间及基区的宽度。 |
