| 1. | The current distribution around a single impurity in a planar quantum wires is studied in this paper
摘要微小器件内杂质原子的存在是影响电流分布的主要因素之一。 |
| 2. | We also inspect the influences for both the width of strap and the position of the impurity , on the current distribution
本文还研究了波导宽度以及杂质原子的位置对电流分布的影响。 |
| 3. | The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors
掺杂模型的能带结构显示，由于在半导体母体中进行杂质原子取代而形成了杂质能级。 |
| 4. | When the electrical characteristics are dictated by impurity atoms , the semiconductor is said to be extrinsic semiconductors
如果半导体的电学性质归因于其中的杂质原子，那么它将被称为杂质半导体。 |
| 5. | Slight displacements of atoms relative to their normal lattice positions , normally imposed by crystalline defects such as dislocations , and interstitial and impurity atoms
原子相对于它们正常点阵位置的轻微位移，通常是由晶体的缺陷，如位错、间隙原子、杂质原子存在引起的。 |
| 6. | Based on schr ? dinger equation we obtain the vigorous result of phase - coherent electronic transport through a single interface in quasi - one - dimension electron waveguide
本文研究了电子波导中单个杂质原子对电流分布的影响，基于薛定谔方程，得到了电子在准一维电子波导中单个杂质所在界面处的精确的相位相干电子输运图像。 |
| 7. | High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。 |
| 8. | Owing to the exchange and interaction between electrons of based semiconductor gaas and magnetic impurity mn , this kind of material combines the functionality of semiconductors with that of magnetic compounds , which shows particular structural , electrical and magnetic properties . so this material is promising in the application
由于这类材料中的基质半导体gaas与磁性杂质原子mn中电子之间的相互转移及相互作用而使得这类材料兼有半导体及磁性化合物的特点，并在结构、电性质及磁性质等方面表现出一些独特的性质，因而具有巨大的应用潜力。 |
