Chinese translation for "杂质浓度"

concentration, impurity
impurity concentration
impurity density

Related Translations:

杂质极限:  limit of impurities

杂质线:  impurity line

固体杂质:  solid impuritiessolid impurity

挥发性杂质:  volatile impurities

游离杂质:  ionized impurity

金属杂质:  foreign metal impuritymetal contaminantsmetal impuritiesmetallic contaminationmetallic impurity

杂质缺陷:  extrinsic defectimpurity defect

杂质光谱:  impurity spectrum

杂质粒子:  foreign particlegritty particle

杂质土:  allied soil

Example Sentences:

	1.	Damage annealing and impurity density distribution of as n2 co - implantation si 的损伤退火及杂质浓度分布
	2.	Test method for residual impurities concentration in microzone of semi - insulating gallium arsenide 半绝缘砷化镓剩余杂质浓度微区试验方法
	3.	Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy 用光致发光光谱法测定硅晶体中杂质浓度的试验方法
	4.	The epitaxial layer quality of gaalinp has been specified so well by double - crystal x - ray diffraction that there are many and strong interference in the picture 在掺杂上成功消除mg的记忆效应，使得器件各外延层杂质浓度达到设计的掺杂水平。
	5.	Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance . the formation theory of aluminum - alloyed back surface field , the effect parameters to the doping concentration and the junction depth were analyzed 比较了两种商业太阳电池的杂质浓度分布及结深情况；叙述了铝背场的作用及形成原理，对影响铝背场表面浓度和结深的参数作了分析。
	6.	From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices 此工艺发明以来，克服了上述两者的弊端，杂质浓度和结深能准确控制而又能任意调整，可进行低、高浓度阶段性掺杂，得到元素ga在si中的理想分布，而且表面浓度均匀一致、重复性好、合格率和优品率高，改善和提高了器件的综合性能。
	7.	Some cubic perovskites are good cases in point such as srtio3 and ktao3 . experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration , the impurity induced ferroe lectric phase transition occurs Srtio _ 3和ktao _ 3是典型的量子顺电体，实验表明当两者分别掺杂ba ~ ( 2 + )和li ~ +且杂质浓度超过各自的临界浓度时，顺电相不再稳定，出现由杂质导致的铁电相变。
	8.	The available equipments can not measure the temperature of the substrate in the diffusion process , and so it is necessary to study the 4 - d temperature distribution in the processed region beforehand . the purpose of this work is to theoretically study the laser induced diffusion process , which is performed within a non - homogenous temperature field 众所周知,扩散系数是温度的敏感函数,而现有的实验装置无法测得扩散过程中基片内的温度分布,因此,为计算杂质浓度分布,首先需要研究激光照射下半导体基片内的四维温度场结构。
	9.	Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density 基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大
	10.	In this paper , we first investigate the impurity effect ( ba2 + ) on the dielectric and phase transition properties in srtio3 within the framework of the transverse - field ising model ( tim ) . then a possible coupling mechanism between the magnetism and dielectric properties in eutio3 is discussed and the magnetic influence on the frequency of the soft - phonon mode is investigated via the heisenberg model , soft - mode theory under the mean field approximation , the second quantization theory and the perturbation theory . and we proceed further investigation on eu1 - xbaxtio3 of 我们发现baxeul _ xtio3 ( o ‘ x ‘ 0 . 2 )的介电常数和由内察的偏置场导致的电极化除了随杂质浓度产生相应的变化，同时在磁和介电性质的藕合作用影响下在低温下偏离通常的量子顺电体行为，在尼尔温度附近出现异常，且磁场通过对最近邻自旋关联的作用来影响介电常数和电极化。

Similar Words：

"杂质煤" Chinese translation, "杂质能带" Chinese translation, "杂质能级" Chinese translation, "杂质能阶" Chinese translation, "杂质能量" Chinese translation, "杂质偏析" Chinese translation, "杂质剖面" Chinese translation, "杂质气体" Chinese translation, "杂质铅矿" Chinese translation, "杂质迁移" Chinese translation