| 1. | Ionization dominates if the particle has an energy larger compared to atomic binding energies .
若入射粒子能量大于原子的束缚能则电离是主要的。 |
| 2. | The spinar is a gigantic machine converting gravitational binding energy into electromagnetic radiation by means of rotation .
旋转体是一架通过自转把引力束缚能转换为电磁辐射的巨大机器。 |
| 3. | Influence of nuclear binding energy in different energy
不同能量下核束缚能的影响 |
| 4. | Magnetic field effects on the binding energy of hydrogentic impurities in square cross - section quantum - well wires
磁场对方形量子阱线中类氢杂质束缚能的影响 |
| 5. | Scaling of hydrogenic impurity binding energy and virial theorem in semiconductor quantum wells and wires
半导体量子阱和量子线中杂质束缚能的度规法则与维里定理 |
| 6. | Zinc oxide ( zno ) is an interesting wide band gap ( 3 . 3 ev ) semiconductor material with a binding energy of 60 mev
氧化锌是一种重要的宽禁带隙（ 3 . 3ev ）半导体材料，它的激子束缚能高达60mev 。 |
| 7. | It shows that the envelop function in the previous references is good only for wider well in the binding energy calculation
这说明，前人选取的包络函数，在计算杂质束缚能时，只在阱宽较大时适用。 |
| 8. | Zinc oxide ( zno ) is a wide band - gap semiconductor , 3 . 37 ev at room temperature , with the high exciton binding energy of 60 mev
Zno是一种宽带隙半导体材料,室温下它的能隙宽度为3 . 37ev ,激子束缚能高达60mev 。 |
| 9. | ( 2 ) when the impurity in the center of the well , the binding energy of the impurity is decreased as the strength of applied electric field increased
( 2 )当施主离子位于势阱中心时，杂质的束缚能随着电场强度的增大而减小。 |
| 10. | Furthermore , we use the wave function and binding energy obtained from above to calculate the photoionization cross - section of the impurity
然后在此基础上，我们采用所选的波函数和得到的束缚能进一步计算了类氢杂质体系的光致电高截面 |
