| 1. | A new physical model of tddb of ultra - thin gate oxides is presented on the bases of above analysis
为超薄栅氧化层的经时击穿建立了一个新的物理模型。 |
| 2. | A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation
本文提出了一个全新的热载流子增强的超薄栅氧化层经时击穿模型。 |
| 3. | A detailed theory analysis is made and a two - step breakdown model of ultra - thin gate oxide is presented
对上述实验现象进行了详细的理论分析，提出了超薄栅氧化层经时击穿分两步。 |
| 4. | In this experiment , we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft
本实验在沉积栅氧化层后立即用pecvd进行多晶硅的氢化处理。 |
| 5. | Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
与通常的fn应力实验相比较，热载流子导致的超薄栅氧化层击穿显示了不同的击穿特性。 |
| 6. | Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole
热空穴注入的实验结果表明超薄栅氧化层的击穿不仅由注入的空穴数量决定。 |
| 7. | This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides
首次提出了超薄栅氧化层的经时击穿是由热电子和空穴共同作用导致的新观点。 |
| 8. | Therefore , the solution to the hot - carrier degradation of mos circuits is obtained . the other hot - carrier immunity techniques such as
对抗热载流子退化的mos器件lddnghtlydopeddrain ）结构及栅氧化层加固技术也作了简单的介绍。 |
| 9. | The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the souce and the drain
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。 |
| 10. | The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection , and the second step is oxides breakdown induced by hole trapping
首先注入的热电子在超薄栅氧化层中产生陷阱中心，然后空穴陷入陷阱导致超薄栅氧击穿。 |
