| 1. | Study of ohmic contact to gan hemt epilayers
外延材料欧姆接触的研究 |
| 2. | Fabrication of ohmic contacts to 4h - sic created by ion - implantation
离子注入层的欧姆接触的制备 |
| 3. | The sheetary contact resistance is smaller ; the ohm contact resistance is smaller
比接触电阻越小，欧姆接触电阻越小。 |
| 4. | And we have built a system for testing the ohmic contact between metals and semiconductor materials
获得了比较低的欧姆接触率，并建立和完善了一套关于欧姆接触率测试的系统。 |
| 5. | But the key problem to fabricate cdte solar cells is to form a stable ohm contact to p - cdte with back electrode
然而p - cdte与背电极的欧姆接触是制备高效cdte电池的关键之一。 |
| 6. | 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively
2 、利用ti al双层电极作欧姆接触， au电极作肖特基接触，制造出algan基肖特基二极管原型器件。 |
| 7. | In this paper , we presented a comprehensive review of the research history and current status of gan material and the devices based on gan
本论文分析了国内外gan基光电子器件研究的历史和现状，重点对金属与n型gan的欧姆接触进行了研究。 |
| 8. | Xps study shows the mechanism that ohmic properties of the contacts become worse is commutative difiusion between aluminum and silicon in 6h - sic
Xps谱表明，该欧姆接触在400以上的退化的主要机制为al及sic中si的互扩散导致了金?半接触界面层的增厚。 |
| 9. | The analysis of i - v characteristic and microstructure shows that the failure of device results from the gate sinking and ohmic contact degradation
通过温度斜坡试验，对器件试验前后的i - v特性的对比分析和微结构的分析表明，欧姆接触退化和栅下沉共同导致了器件的失效。 |
| 10. | The primary investigation of this paper is the ohmic contact between metafs ' and gan . moreover , we have prepared photodetectors and schottky diodes based on gan
本文的主要工作是对金属与n型gan的欧姆接触进行了研究，并在此基础上制备了硅基gan上的紫外探测器和gan肖特基二极管。 |
