| 1. | Oxygen precipitates (useful for gettering) can reduce the yield strength (critical shear stress) up to fivefole .
氧沉淀（可用作吸杂）会使屈服强度（临界剪应力）降低为五分之一。 |
| 2. | The advance of research on oxygen precipitates in ncz silicon
掺氮直拉单晶硅中氧沉淀的研究进展 |
| 3. | Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
锗对重掺硼直拉硅中氧沉淀的影响 |
| 4. | Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的测定-间隙氧含量减少法 |
| 5. | Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法 |
| 6. | Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。 |
| 7. | Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
刘培东,朱爱平,张锦心等.碳和氮原子在氧沉淀中的作用[ j ] .半导体学报, 1999 , 20 : 107 |
| 8. | Secondly , the character of carbon and the effect of carbon on the oxygen deposition in annealing are studied
其次，研究了太阳电池用硅片中碳的热行为以及热处理过程中碳对硅片中氧沉淀和少子寿命的影响。 |
| 9. | The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。 |
| 10. | The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing
其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。 |
