Chinese translation for "氮化的"
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- azotizing
Related Translations:
局部氮化: selective nitriding 液体氮化: bath nitridingwet nitriding 氮化电炉: nitriding electric furnace
- Example Sentences:
| 1. | ( 2 ) with the aid of in situ monitoring tool , we have investigated the effects of substrate nitridation
( 2 )以在位监测为辅助工具，研究了蓝宝石衬底氮化的影响。 | | 2. | The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry
从理论上详细地分析了二氧化硅氮化与硅片氮化的关系和氧分在氮化过程中对氮化的影响。 | | 3. | The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment , ic technics and pulling monocrystal in nitrogen
在硅片的热处理、集成电路工艺和氮气保护的拉晶过程中，都涉及到硅的氮化问题，因此硅片氮气直接氮化的研究意义重大。 | | 4. | With the research on hfoxny gate dielectrics , it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2 , futher more it can offer us direction on optimize the fabrication process
结果表明，与hfo :相比，氮化的hfo :具有小的漏电流。我们的研究结果有助于进一步了解hro :栅介质的泄漏电流机制和silc效应的特征，为进一步优化hfo :高k栅介质的制备工艺提供指导。 | | 5. | At same time macroscopical and microcosmic mathematical model of nitridation are investigated . in this paper the thermodynamics of direct - nitridation , effect of temperature and nitrogen ambience on nitridaton and self - diffusion are discussed in the theory of physical chemistry in detail
同时本文用物理化学的原理讨论了硅片氮气直接氮化的热力学方程、氮化条件的理论根据和原子的自扩散，从理论上证明随温度升高氮化加剧，气氛纯度越高氮化越容易的结论。 | | 6. | We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 |
- Similar Words：
- "氮弧焊" Chinese translation, "氮化" Chinese translation, "氮化层" Chinese translation, "氮化处理" Chinese translation, "氮化淬火" Chinese translation, "氮化电炉" Chinese translation, "氮化法" Chinese translation, "氮化钒" Chinese translation, "氮化钙" Chinese translation, "氮化钢" Chinese translation
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