| 1. | It is showed that after doping s the bn thin films of n - type conductivity are obtained
研究表明，未掺杂的氮化硼薄膜电阻率为为1 |
| 2. | 1 the influence of process parameters for depositing cbn films was studied all round
1系统地研究了工艺参数对制备立方氮化硼薄膜的影响。 |
| 3. | Preparation of high quality cubic boron nitride film by radio frequency magnetron sputtering and its characterization
高质量立方氮化硼薄膜的射频磁控溅射制备及其性能表征 |
| 4. | For obtaining cbn thin films , it is necessary that substrate negative bias voltage is not lower than 90v and r . f power is not lower than 200w
若要得到立方氮化硼薄膜，负偏压不能低于90v ，功率不能低于200w 。 |
| 5. | The refractive index ( at 632 . 8nm ) of cbn thin film with 92 . 8 % cubic phase content is measured to be2 . 19 by ellipsometer
用椭偏仪测得，对于波长为632 . 8nm的光，立方相含量为92 . 8的氮化硼薄膜的折射率为2 . 19 。 |
| 6. | The preparation and properties study of cubic boron nitride thin films are attractive and also very difficult to international scientific wold for recent years
近几年来，立方氮化硼薄膜的制备和性质研究一直是国际上的研究热点之一，同时又是难点之一。 |
| 7. | The experiments show that the condition window for cubic boron nitride ( cbn ) formation is very narrow . so the formation of cubic boron nitride film is very difficult
实验表明，立方氮化硼薄膜成核和生长的条件窗口很窄，因此立方氮化硼薄膜难以合成。 |
| 8. | 2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity
掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。 |
| 9. | In order to prepare high quality films , appropriate temperature and r . f . power should be selected , and moreover , the content of the hydrogen need be controlled
因此制备薄膜与衬底结合良好、较高质量的氮化硼薄膜，应在适当的沉积温度( 420 )和射频功率( 160w )下并适当控制反应气体中氢气的含量。 |
| 10. | The results showed that the friction factor of bn film was about half of that of the steel based materials , and the cohesion between film and substrate could obviously be increased by the ni - p interface layer
结果表明：氮化硼薄膜的摩擦因数约为钢基材料的一半，中间层镍磷合金的加入使薄膜结合力显著提高。 |
