| 1. | The longer deposition time is , the deeper films are
若稳定沉积时间越长，膜层厚度越厚。 |
| 2. | B ) the deposition time may influence the films orientation and growth rate
B ）沉积时间会影响薄膜的取向和生长速率。 |
| 3. | Deposition time and bath temperature were main factors affecting the size of crystalline granularity
沉积时间和镀液温度是影响镀层表面晶粒粒度大小的主要因素。 |
| 4. | Through the partition and contrast of oil layer , the four sand groups 16 minilayers are divided into 19 sedimentary units
通过层组的划分与对比，将原来四个砂组16个小层细分为19个沉积时间单元。 |
| 5. | When the depositing time becomes very long , the equipment will probably be damaged , therefore , the depositing time was controlled in 25 minutes
但由于考虑设备寿命等因素，薄膜沉积时间短，膜层比较薄，光催化性能很差。 |
| 6. | The thickness of the film increases with the growth of voltage when deposited for certain time and increases with the enhancement of deposition time when deposited at certain voltage
膜厚随沉积电压和沉积时间的增加而增加，但增加速率下降。同时研究了提拉法镀膜中工艺参数对制备氧化铝膜的影响。 |
| 7. | Moreover , thermal shock behavior of 3d - c / sic was distinctly superior to that of recrystallization sic , and when the deposition time of pyrocarbon was 20h , 3d - c / sic possessed the longest thermal shock life
3d - c sic复合材料的抗热震性能明显优于重结晶sic陶瓷材料；三种界面层的3d - c sic中，以热解碳沉积时间为20小时获得的界面层复合材料热震寿命最长。 |
| 8. | It was found that the zeta potential and average size of the colloidal particles increase earlier and drop later with the addition of sec - buoh and both of them reach the maximal values which are 790nm and 20mv respectively when the mol ratio between sec - buoh and asb is 30
结果表明，胶体颗粒的平均粒径和zeta电位随异丁醇的增加先升高后下降，当沉积时间为1h时，异丁醇asb为40时膜的厚度最佳。 |
| 9. | The principle of this method is that we can regard the time stratum unit as three - dimension sedimentary body , when the stratum formed in a certain geological epoch , there was a definite proportion relationship between the thickness of the stratum and the thickness of the time stratum unit
其理论依据是：等时地层单元内，由某一地质历史时期所形成地层厚度与沉积时间具有一一对应的关系，据此对某一等时界面上的沉积特征进行数字化的描述。 |
| 10. | The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd . when the temperature ( ts < 450 , ta < 800 ) is low , the structure of the samples is still amorphous . the majority content of the sample is sio 90 by the aid of xps
利用双离子束溅射沉积技术，通过共溅射方法制备了si - sio _ 2薄膜，研究了沉积时间、工作气压p _ ( ar ) 、基片温度等对沉积速率的影响，用tem和xrd分析了样品的结构。 |
